Advanced poly-Si TFT with fin-like channels by ELA

Huaxiang Yin; Wenxu Xianyu; Hans Cho; Xiaoxin Zhang; Jisim Jung; Doyoung Kim; Hyuck Lim; Kyungbae Park; Jongman Kim; Jangyeon Kwon; Takashi Noguchi

doi:10.1109/LED.2006.872901

Advanced poly-Si TFT with fin-like channels by ELA

Huaxiang Yin, Wenxu Xianyu, Hans Cho, Xiaoxin Zhang, Jisim Jung, Doyoung Kim, Hyuck Lim, Kyungbae Park, Jongman Kim, Jangyeon Kwon, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm²/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 10⁶.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/LED.2006.872901
Publication status	Published - 2006 May

Bibliographical note

Funding Information:
Manuscript received November 28, 2005; revised February 13, 2006. This work was supported by and performed at the Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. Sin.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.872901

Cite this

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title = "Advanced poly-Si TFT with fin-like channels by ELA",

abstract = "The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.",

author = "Huaxiang Yin and Wenxu Xianyu and Hans Cho and Xiaoxin Zhang and Jisim Jung and Doyoung Kim and Hyuck Lim and Kyungbae Park and Jongman Kim and Jangyeon Kwon and Takashi Noguchi",

note = "Funding Information: Manuscript received November 28, 2005; revised February 13, 2006. This work was supported by and performed at the Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. Sin.",

year = "2006",

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T1 - Advanced poly-Si TFT with fin-like channels by ELA

AU - Yin, Huaxiang

AU - Xianyu, Wenxu

AU - Cho, Hans

AU - Zhang, Xiaoxin

AU - Jung, Jisim

AU - Kim, Doyoung

AU - Lim, Hyuck

AU - Park, Kyungbae

AU - Kim, Jongman

AU - Kwon, Jangyeon

AU - Noguchi, Takashi

N1 - Funding Information: Manuscript received November 28, 2005; revised February 13, 2006. This work was supported by and performed at the Samsung Advanced Institute of Technology. The review of this letter was arranged by Editor J. Sin.

PY - 2006/5

Y1 - 2006/5

N2 - The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.

AB - The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm2/V · s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 106.

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DO - 10.1109/LED.2006.872901

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EP - 359

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Advanced poly-Si TFT with fin-like channels by ELA

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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