Advanced Cu interconnection via electroless-plated Ni interlayer on the gate of oxide thin-film transistors

Seung Hee Nam, Tae Hyoung Moon, Kyu Whang Lee, Kyoung Ha Lee, Soon Sung Yoo, Woo Sup Shin, Myoung Su Yang, Seongil Im

Research output: Contribution to journalArticlepeer-review


We demonstrate Cu interconnection/electrode formation in bottom gate InGaZnO (IGZO) thin-film transistors (TFTs), so that conductivity may be enhanced and a more advanced display panel may replace conventional Al and Mo. To date, the development of a Cu interconnection/electrode has been hampered by the poor adhesion between Cu and SiO2, the main gate insulator (GI) for IGZO TFTs. However, our research shows that an electro-less selective plating of Na-free Ni on pre-patterned Cu electrodes can make this goal obtainable. According to the bias- and photo-stability measurements, our IGZO TFT with Na-free Ni-plated Cu electrodes are much more stable than IGZO TFTs prepared with conventional methods such as NaOH-induced Ni plating on Cu and H-containing SiNx/SiO2 double layer GI on Cu. Moreover, the conventionally-prepared devices were also photo-sensitive due to the Na or H ions diffused into the GI/channel interface area. We conclude that electro-less plating of Na-free Ni on Cu is a promising approach for advanced future display panel by oxide TFTs.

Original languageEnglish
Pages (from-to)Q190-Q194
JournalECS Journal of Solid State Science and Technology
Issue number10
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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