Adhesion and microstructure of Ni contacts to 3C-SiC

This paper reports on the microstructure-adhesion property relationship in Ni/3C-SiC ohmic contacts. The microstructures of the surface and the interface in the Ni/3C-SiC layers annealed at various temperatures were investigated using the X-ray scattering techniques. The adhesion of the Ni on the 3C-SiC surface was examined by the scratch tester in the acoustic emission-frictional force mode. The Ni/SiC layer annealed at 500 °C exhibits the highest surface roughness with the lowest interface roughness. The Ni/SiC adhesion force was shown to be decreased with the annealing temperature up to 500 °C. As the annealing temperature is higher than 500 °C, the domain size of the NiSi₂ silicides is increased with enhancement of crystallinity. The crystallinity enhancement is attributed, presumably, to the low mismatch of lattice constants between the silicide and 3C-SiC.