Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

Jungwoo Oh; Prashant Majhi; Raj Jammy; Raymond Joe; Anthony Dip; Takuya Sugawara; Yasushi Akasaka; Takanobu Kaitsuka; Tsunetoshi Arikado; Masayuki Tomoyasu

doi:10.1109/VTSA.2009.5159274

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

Jungwoo Oh, Prashant Majhi, Raj Jammy, Raymond Joe, Anthony Dip, Takuya Sugawara, Yasushi Akasaka, Takanobu Kaitsuka, Tsunetoshi Arikado, Masayuki Tomoyasu

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO₂ high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×10¹⁰), and gate leakage current (∼10^-2 A/cm² at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	22-23
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159274
Publication status	Published - 2009
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan, Province of China Duration: 2009 Apr 27 → 2009 Apr 29

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	09/4/27 → 09/4/29

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/VTSA.2009.5159274

Cite this

Oh, J., Majhi, P., Jammy, R., Joe, R., Dip, A., Sugawara, T., Akasaka, Y., Kaitsuka, T., Arikado, T., & Tomoyasu, M. (2009). Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 22-23). [5159274] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2009.5159274

Oh, Jungwoo ; Majhi, Prashant ; Jammy, Raj et al. / Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. pp. 22-23 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{ac0d358bf116403a87ea653bb288bf02,

title = "Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks",

abstract = "We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4{\AA}), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.",

author = "Jungwoo Oh and Prashant Majhi and Raj Jammy and Raymond Joe and Anthony Dip and Takuya Sugawara and Yasushi Akasaka and Takanobu Kaitsuka and Tsunetoshi Arikado and Masayuki Tomoyasu",

year = "2009",

doi = "10.1109/VTSA.2009.5159274",

language = "English",

isbn = "9781424427857",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "22--23",

booktitle = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09",

note = "2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 ; Conference date: 27-04-2009 Through 29-04-2009",

}

Oh, J, Majhi, P, Jammy, R, Joe, R, Dip, A, Sugawara, T, Akasaka, Y, Kaitsuka, T, Arikado, T & Tomoyasu, M 2009, Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159274, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 22-23, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, Province of China, 09/4/27. https://doi.org/10.1109/VTSA.2009.5159274

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. / Oh, Jungwoo; Majhi, Prashant; Jammy, Raj et al.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 22-23 5159274 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Jammy, Raj

AU - Joe, Raymond

AU - Dip, Anthony

AU - Sugawara, Takuya

AU - Akasaka, Yasushi

AU - Kaitsuka, Takanobu

AU - Arikado, Tsunetoshi

AU - Tomoyasu, Masayuki

PY - 2009

Y1 - 2009

N2 - We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

AB - We have demonstrated high mobility pMOSFETs on high quality epitaxial SiGe films selectively grown on Si (100) substrates. With a Si cap processed on SiGe channels, HfSiO2 high-k gate dielectrics exhibited low C-V hysteresis (<10 mV), interface trap density (7.5×1010), and gate leakage current (∼10-2 A/cm2 at an EOT of 13.4Å), which are comparable to gate stack on Si channels. The mobility enhancement afforded intrinsically by the SiGe channel (60%) is further increased by a Si cap (40%) process, resulting in a combined ∼100% enhancement over Si channels. The Si cap process also mitigates the low potential barrier issues of SiGe channels, which are major causes of the high off-state current of small bandgap energy SiGe pMOSFETs, by improving gate control over the channel.

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U2 - 10.1109/VTSA.2009.5159274

DO - 10.1109/VTSA.2009.5159274

M3 - Conference contribution

AN - SCOPUS:77950143676

SN - 9781424427857

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 22

EP - 23

BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09

Y2 - 27 April 2009 through 29 April 2009

ER -

Oh J, Majhi P, Jammy R, Joe R, Dip A, Sugawara T et al. Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 22-23. 5159274. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2009.5159274

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si cap and high-k metal gate stacks

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