Achievement of a high channel strain via dry oxidation of recessed source/drain Si1-x Gex structures

J. H. Yoo; S. W. Kim; S. M. Koo; D. H. Ko; H. J. Lee

doi:10.1063/1.3573833

Achievement of a high channel strain via dry oxidation of recessed source/drain Si_1-x Ge_x structures

J. H. Yoo, S. W. Kim, S. M. Koo, D. H. Ko, H. J. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This study proposes a method of acquiring a high channel strain by locally oxidizing recessed Si_1-x Ge_x source/drain structures and forming a Ge condensation layer as an effective stressor. Combination of several transmission electron microscopy characterization techniques including nanobeam diffraction allowed us to analyze the thickness and composition of the Ge condensation layer formed upon oxidation, and the evolution of the channel strain. Nanobeam diffraction results demonstrate that this method can be critically used to effectively increase the channel strain.

Original language	English
Article number	133121
Journal	Applied Physics Letters
Volume	98
Issue number	13
DOIs	https://doi.org/10.1063/1.3573833
Publication status	Published - 2011 Mar 28

Bibliographical note

Funding Information:
This work was financially supported by the “Next-generation Substrate technology for high performance semiconductor devices (Grant No. KI002083)” of MKE and “System IC 2010” project of the Korea Ministry of Science and Technology and Ministry of Commerce, Industry and Energy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3573833

Cite this

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abstract = "This study proposes a method of acquiring a high channel strain by locally oxidizing recessed Si1-x Gex source/drain structures and forming a Ge condensation layer as an effective stressor. Combination of several transmission electron microscopy characterization techniques including nanobeam diffraction allowed us to analyze the thickness and composition of the Ge condensation layer formed upon oxidation, and the evolution of the channel strain. Nanobeam diffraction results demonstrate that this method can be critically used to effectively increase the channel strain.",

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