A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

Gun Hwan Kim, Kyung Min Kim, Jun Yeong Seok, Hyun Ju Lee, Deok Yong Cho, Jeong Hwan Han, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of >108 and a forward current density of >105 A cm-2 for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m ≫ 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.

Original languageEnglish
Article number385202
JournalNanotechnology
Volume21
Issue number38
DOIs
Publication statusPublished - 2010 Sept 24

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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