A Study Using Crystal Transport of Ions in Matter When Boron Ion is Implanted into a Tungsten Trioxide Thin Film

Recently, numerous thin-film doping methods, such as solar cells, have been employed to improve semiconductor efficiency. Simulations of boron ion (B-ion) implantation using crystal transport of ions in matter obtained the depth profile. To obtain the result of hole concentration using the hole concentration program as the depth profile, a phenomenon caused by B-ions implantation into Si can be expected. The hole concentration also decreased as the dose that penetrated profoundly decreased, owing to the tungsten trioxide thin films (WO₃-TF). Therefore, the dose optimized for the thickness of the WO₃-TF and the initial ion implantation energy can be predicted using the two programs. In addition, using hole concentration data, it was possible to determine the depth at which the electrical conductivity appeared.