A study on the thermal stability of silicon carbide whiskers on growth temperature

W. S. Park, B. J. Joo, D. J. Choi, H. D. Kim

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11 Citations (Scopus)


The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.

Original languageEnglish
Pages (from-to)5529-5531
Number of pages3
JournalJournal of Materials Science
Issue number20
Publication statusPublished - 2005 Oct

Bibliographical note

Funding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Ceramics and Composites
  • Mechanical Engineering
  • Polymers and Plastics
  • Materials Science(all)
  • Materials Science (miscellaneous)


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