A study on the thermal stability of silicon carbide whiskers on growth temperature

W. S. Park; B. J. Joo; D. J. Choi; H. D. Kim

doi:10.1007/s10853-005-4516-9

A study on the thermal stability of silicon carbide whiskers on growth temperature

W. S. Park, B. J. Joo, D. J. Choi, H. D. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.

Original language	English
Pages (from-to)	5529-5531
Number of pages	3
Journal	Journal of Materials Science
Volume	40
Issue number	20
DOIs	https://doi.org/10.1007/s10853-005-4516-9
Publication status	Published - 2005 Oct

Bibliographical note

Funding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Ceramics and Composites
Mechanical Engineering
Polymers and Plastics
Materials Science(all)
Materials Science (miscellaneous)

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10.1007/s10853-005-4516-9

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title = "A study on the thermal stability of silicon carbide whiskers on growth temperature",

abstract = "The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.",

author = "Park, {W. S.} and Joo, {B. J.} and Choi, {D. J.} and Kim, {H. D.}",

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T1 - A study on the thermal stability of silicon carbide whiskers on growth temperature

AU - Park, W. S.

AU - Joo, B. J.

AU - Choi, D. J.

AU - Kim, H. D.

N1 - Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

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Y1 - 2005/10

N2 - The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.

AB - The thermal stability of silicon carbide whiskers, which were grown by chemical vapor infiltration (CVI) method without any metallic catalyst, was analyzed. It was found that the thermal stability of the whiskers is one of the most important characteristics for applications in severe operation condition such as diesel particulate filters (DPF) of filters for incinerator and electronic power stations. The whiskers formed at over 1300°C were heavily faulted due to the rapid growth rate. It was observed that the stacking faults, as defects, reduce the activation energy for evaporation, so that evaporation occurred in spite of the relatively low temperature of annealing of 1100°C.

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A study on the thermal stability of silicon carbide whiskers on growth temperature

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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