A study on the thermal stabilities of the NiGe and Ni1-xTa x Ge systems

K. Park, B. H. Lee, D. Lee, D. H. Ko, K. H. Kwak, C. W. Yang, H. Kim

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14 Citations (Scopus)


The thermal stabilities of the Ni-silicide and Ni-germanide systems were compared, and that of the Ni0.9 Ta0.1 Ge alloy system was also studied. Although the NiSi film had a stable low sheet resistance (Rs) in the formation temperature range from 300 to 650°C, NiGe exhibited an abrupt increase of Rs from 500°C due to the severe agglomeration. The doping of the Ni film with Ta slightly improved the thermal stability of NiGe due to the formation of a Ta-rich layer on top of NiGe and subsequent reduction of the surface-free energy of NiGe with outside ambient. During the additional thermal annealing after NiGe formation, the germanide films formed from Ni-Ta alloy also exhibited slightly improved thermal stability characteristics as compared to the pure Ni-germanide system.

Original languageEnglish
Pages (from-to)H557-H560
JournalJournal of the Electrochemical Society
Issue number7
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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