A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

Jung Ho Yoo; Seok Woo Nam; Sung Kwan Kang; Yun Ha Jeong; Dae Hong Ko; Ja Hum Ku; Hoo Jeong Lee

doi:10.1016/S0167-9317(00)00525-6

A study on the microstructure and electrical properties of CeO₂ thin films for gate dielectric applications

Jung Ho Yoo, Seok Woo Nam, Sung Kwan Kang, Yun Ha Jeong, Dae Hong Ko, Ja Hum Ku, Hoo Jeong Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We investigated the evolution of microstructures and the electrical properties of CeO₂ thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O₂ gas ambient. The CeO₂ thin films deposited at 300°C were polycrystalline. After annealing in ambient O₂ gas, the crystallinity of the CeO₂ film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO₂ thin film annealed above 700°C in the ambient O₂ gas decreased due to the growth of the interfacial SiO₂ layer between CeO₂ film and silicon substrate by the diffusion of oxidizing species through CeO₂ thin film from the ambient gas.

Original language	English
Pages (from-to)	187-190
Number of pages	4
Journal	Microelectronic Engineering
Volume	56
Issue number	1-2
DOIs	https://doi.org/10.1016/S0167-9317(00)00525-6
Publication status	Published - 2001 May

Bibliographical note

Funding Information:
This research was financially supported by Samsung Electronics Co. Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/S0167-9317(00)00525-6

Cite this

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title = "A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications",

abstract = "We investigated the evolution of microstructures and the electrical properties of CeO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O2 gas ambient. The CeO2 thin films deposited at 300°C were polycrystalline. After annealing in ambient O2 gas, the crystallinity of the CeO2 film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO2 thin film annealed above 700°C in the ambient O2 gas decreased due to the growth of the interfacial SiO2 layer between CeO2 film and silicon substrate by the diffusion of oxidizing species through CeO2 thin film from the ambient gas.",

author = "Yoo, {Jung Ho} and Nam, {Seok Woo} and Kang, {Sung Kwan} and Jeong, {Yun Ha} and Ko, {Dae Hong} and Ku, {Ja Hum} and Lee, {Hoo Jeong}",

note = "Funding Information: This research was financially supported by Samsung Electronics Co. Ltd. ",

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T1 - A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

AU - Yoo, Jung Ho

AU - Nam, Seok Woo

AU - Kang, Sung Kwan

AU - Jeong, Yun Ha

AU - Ko, Dae Hong

AU - Ku, Ja Hum

AU - Lee, Hoo Jeong

N1 - Funding Information: This research was financially supported by Samsung Electronics Co. Ltd.

PY - 2001/5

Y1 - 2001/5

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AB - We investigated the evolution of microstructures and the electrical properties of CeO2 thin films deposited by the reactive DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O2 gas ambient. The CeO2 thin films deposited at 300°C were polycrystalline. After annealing in ambient O2 gas, the crystallinity of the CeO2 film was improved and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO2 thin film annealed above 700°C in the ambient O2 gas decreased due to the growth of the interfacial SiO2 layer between CeO2 film and silicon substrate by the diffusion of oxidizing species through CeO2 thin film from the ambient gas.

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