A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films

Hyuncheol Kim; Hyung Ho Park

doi:10.1016/j.ceramint.2011.05.108

A study on the electrical properties of fluorine doped direct-patternable SnO ₂ thin films

Hyuncheol Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Direct-patternable fluorine doped SnO ₂ (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO ₂ films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO ₂ films can be improved by fluorine doping.

Original language	English
Pages (from-to)	S609-S612
Journal	Ceramics International
Volume	38
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.ceramint.2011.05.108
Publication status	Published - 2012 Jan

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) ( KRF-2008-313-D00592 ). Experiments at PLS were supported in part by MEST and POSTECH .

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.ceramint.2011.05.108

Cite this

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title = "A study on the electrical properties of fluorine doped direct-patternable SnO 2 thin films",

abstract = "Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.",

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N2 - Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

AB - Direct-patternable fluorine doped SnO 2 (FTO) thin films were fabricated by a photochemical solution deposition method. The electrical properties and crystallinity of FTO thin films were slightly enhanced relative to undoped SnO 2 films and the improvement of electrical conduction was found to be due to an increase of carrier concentration. Direct-patterning of FTO thin films was performed without using photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated at low cost, and the electrical properties of direct-patternable SnO 2 films can be improved by fluorine doping.

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