A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Kyung Park; Chee Hong An; Byung Il Hwang; Hoo Jeong Lee; Hyoungsub Kim; Kyungseok Son; Jang Yeon Kwon; Sangyun Lee

doi:10.1557/jmr.2010.0032

A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Kyung Park, Chee Hong An, Byung Il Hwang, Hoo Jeong Lee, Hyoungsub Kim, Kyungseok Son, Jang Yeon Kwon, Sangyun Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This study examined the degradation of the device performance of InGaZnO₄ (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400-500 °C) and then the Mo oxide further reacted with IGZO to produce an In-Mo-O compound with some Ga at higher temperatures (600-700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

Original language	English
Pages (from-to)	266-271
Number of pages	6
Journal	Journal of Materials Research
Volume	25
Issue number	2
DOIs	https://doi.org/10.1557/jmr.2010.0032
Publication status	Published - 2010 Feb

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Knowledge Economy (MKE) and the Korea Institute for Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology. This work was also supported in part by the World Class University program of National Research Foundation of Korea (Grant No. R32-2008-000-10124-0).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/jmr.2010.0032

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title = "A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors",

abstract = "This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400-500 °C) and then the Mo oxide further reacted with IGZO to produce an In-Mo-O compound with some Ga at higher temperatures (600-700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.",

author = "Kyung Park and An, {Chee Hong} and Hwang, {Byung Il} and Lee, {Hoo Jeong} and Hyoungsub Kim and Kyungseok Son and Kwon, {Jang Yeon} and Sangyun Lee",

note = "Funding Information: This work was supported in part by the Ministry of Knowledge Economy (MKE) and the Korea Institute for Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology. This work was also supported in part by the World Class University program of National Research Foundation of Korea (Grant No. R32-2008-000-10124-0).",

year = "2010",

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doi = "10.1557/jmr.2010.0032",

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pages = "266--271",

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T1 - A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

AU - Park, Kyung

AU - An, Chee Hong

AU - Hwang, Byung Il

AU - Lee, Hoo Jeong

AU - Kim, Hyoungsub

AU - Son, Kyungseok

AU - Kwon, Jang Yeon

AU - Lee, Sangyun

N1 - Funding Information: This work was supported in part by the Ministry of Knowledge Economy (MKE) and the Korea Institute for Advancement of Technology (KIAT) through the Human Resource Training Project for Strategic Technology. This work was also supported in part by the World Class University program of National Research Foundation of Korea (Grant No. R32-2008-000-10124-0).

PY - 2010/2

Y1 - 2010/2

N2 - This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400-500 °C) and then the Mo oxide further reacted with IGZO to produce an In-Mo-O compound with some Ga at higher temperatures (600-700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

AB - This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400-500 °C) and then the Mo oxide further reacted with IGZO to produce an In-Mo-O compound with some Ga at higher temperatures (600-700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

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A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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