Abstract
Lanthanum aluminate (LaAlO 3) thin films with two kinds of Al composition were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd) 3 tetraglyme adduct and Al-acetylacetonate as source precursors. The structural and the electrical properties of the as-deposited and the annealed films were investigated as functions of the annealing temperature, and the properties of films with different Al compositions were compared with each other. Films with more incorporated-Al showed less thickness change when they were annealed at 900°C for 1 hour and lower leakage current densities for the as-deposited and the annealed films than films with lower Al composition. In the point of equivalent oxide thickness (EOT), although the as-deposited lanthanum aluminate films with a higher Al composition had a larger EOT than the as-deposited films with a lower Al composition, the EOT of annealed films with a higher Al composition was smaller than that of annealed films with a lower Al composition.
| Original language | English |
|---|---|
| Pages (from-to) | 22-24 |
| Number of pages | 3 |
| Journal | Journal of the Korean Physical Society |
| Volume | 44 |
| Issue number | 1 |
| Publication status | Published - 2004 Jan |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)