A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition

D. C. Lim; Y. J. Lee; D. J. Choi

doi:10.1016/j.surfcoat.2004.04.081

A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition

D. C. Lim, Y. J. Lee, D. J. Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H₂/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

Original language	English
Pages (from-to)	247-251
Number of pages	5
Journal	Surface and Coatings Technology
Volume	192
Issue number	2-3
DOIs	https://doi.org/10.1016/j.surfcoat.2004.04.081
Publication status	Published - 2005 Mar 21

Bibliographical note

Funding Information:
This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2004.04.081

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title = "A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition",

abstract = "Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.",

author = "Lim, {D. C.} and Lee, {Y. J.} and Choi, {D. J.}",

note = "Funding Information: This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.",

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doi = "10.1016/j.surfcoat.2004.04.081",

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AU - Lim, D. C.

AU - Lee, Y. J.

AU - Choi, D. J.

N1 - Funding Information: This research, under the contract project code MS-03-211-01, has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr ), which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

PY - 2005/3/21

Y1 - 2005/3/21

N2 - Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

AB - Silicon carbide whiskers were grown by chemical vapor deposition without a metallic catalyst at a temperature ranging between 1000 and 1100 °C, and at a constant pressure of 5 Torr with input gas ratios, α [H2/MTS (methyltrichlorosilane)], of 30 to 50. The mean diameter of the whiskers changed as temperature and input gas ratios were varied. To determine why the diameter of the whiskers changed, we investigated the effect of these two parameters, temperature and gas ratio, on the stoichiometry of the deposit, both from thermodynamical calculations and from XPS measurements on the as grown whiskers. We demonstrated that the amount of free carbon increases as the temperature increases and the input gas ratio decreases. We showed the correction between the amount of free carbon and the mean whisker diameter.

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EP - 251

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

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ER -

A study of the effect of excessive free carbon on mean whisker diameters grown by chemical vapor deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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