Abstract
We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.
Original language | English |
---|---|
Pages (from-to) | 1798-1801 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 16 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2016 Feb 1 |
Bibliographical note
Publisher Copyright:Copyright © 2016 American Scientific Publishers All rights reserved.
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics