A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

K. S. Jeon; J. H. Sung; M. W. Lee; H. Y. Song; H. Y. Shin; W. H. Park; Y. I. Jang; M. G. Kang; Y. H. Choi; J. S. Lee; D. H. Ko; H. Y. Ryu

doi:10.1166/jnn.2016.11939

A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

K. S. Jeon, J. H. Sung, M. W. Lee, H. Y. Song, H. Y. Shin, W. H. Park, Y. I. Jang, M. G. Kang, Y. H. Choi, J. S. Lee, D. H. Ko, H. Y. Ryu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.

Original language	English
Pages (from-to)	1798-1801
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2016.11939
Publication status	Published - 2016 Feb 1

Bibliographical note

Funding Information:
This work was supported in part by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630).

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2016.11939

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Jeon, K. S., Sung, J. H., Lee, M. W., Song, H. Y., Shin, H. Y., Park, W. H., Jang, Y. I., Kang, M. G., Choi, Y. H., Lee, J. S., Ko, D. H., & Ryu, H. Y. (2016). A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates. Journal of Nanoscience and Nanotechnology, 16(2), 1798-1801. https://doi.org/10.1166/jnn.2016.11939

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title = "A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates",

abstract = "We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.",

author = "Jeon, {K. S.} and Sung, {J. H.} and Lee, {M. W.} and Song, {H. Y.} and Shin, {H. Y.} and Park, {W. H.} and Jang, {Y. I.} and Kang, {M. G.} and Choi, {Y. H.} and Lee, {J. S.} and Ko, {D. H.} and Ryu, {H. Y.}",

note = "Funding Information: This work was supported in part by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630). Publisher Copyright: Copyright {\textcopyright} 2016 American Scientific Publishers All rights reserved.",

year = "2016",

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doi = "10.1166/jnn.2016.11939",

language = "English",

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Jeon, KS, Sung, JH, Lee, MW, Song, HY, Shin, HY, Park, WH, Jang, YI, Kang, MG, Choi, YH, Lee, JS, Ko, DH & Ryu, HY 2016, 'A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates', Journal of Nanoscience and Nanotechnology, vol. 16, no. 2, pp. 1798-1801. https://doi.org/10.1166/jnn.2016.11939

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T1 - A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

AU - Jeon, K. S.

AU - Sung, J. H.

AU - Lee, M. W.

AU - Song, H. Y.

AU - Shin, H. Y.

AU - Park, W. H.

AU - Jang, Y. I.

AU - Kang, M. G.

AU - Choi, Y. H.

AU - Lee, J. S.

AU - Ko, D. H.

AU - Ryu, H. Y.

N1 - Funding Information: This work was supported in part by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630). Publisher Copyright: Copyright © 2016 American Scientific Publishers All rights reserved.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.

AB - We investigate the strain difference in InGaN/GaN multiple quantum wells of blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates by comparing the strength of piezo-electric fields in MQWs. The piezo-electric fields for two LED samples grown on silicon and sapphire substrates are measured by using the reverse-bias electro-reflectance (ER) spectroscopy. The flat-band voltage is obtained by measuring the applied reverse bias voltage that induces a phase inversion in the ER spectra, which is used to calculate the strength of piezo-electric fields. The piezo-electric field is determined to be 1.36 MV/cm for the LED on silicon substrate and 1.83 MV/cm for the LED on sapphire substrate. The ER measurement results indicate that the strain-induced piezo-electric field is greatly reduced in the LED grown on silicon substrates consistent with previous strain measurement results by micro-Raman spectroscopy and high-resolution transmission electron microscopy.

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A study of piezoelectric field related strain difference in GaN-based blue light-emitting diodes grown on silicon(111) and sapphire substrates

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Bibliographical note

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