A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

S. Y. Lee; T. H. Kim; D. I. Suh; N. K. Cho; H. K. Seong; S. W. Jung; H. J. Choi; S. K. Lee

doi:10.1016/j.cplett.2006.05.133

A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

S. Y. Lee, T. H. Kim, D. I. Suh, N. K. Cho, H. K. Seong, S. W. Jung, H. J. Choi, S. K. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 V_p-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.

Original language	English
Pages (from-to)	107-112
Number of pages	6
Journal	Chemical Physics Letters
Volume	427
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2006.05.133
Publication status	Published - 2006 Aug 18

Bibliographical note

Funding Information:
This work was supported by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J07501).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2006.05.133

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title = "A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties",

abstract = "We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.",

author = "Lee, {S. Y.} and Kim, {T. H.} and Suh, {D. I.} and Cho, {N. K.} and Seong, {H. K.} and Jung, {S. W.} and Choi, {H. J.} and Lee, {S. K.}",

note = "Funding Information: This work was supported by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J07501).",

year = "2006",

month = aug,

day = "18",

doi = "10.1016/j.cplett.2006.05.133",

language = "English",

volume = "427",

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journal = "Chemical Physics Letters",

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T1 - A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

AU - Lee, S. Y.

AU - Kim, T. H.

AU - Suh, D. I.

AU - Cho, N. K.

AU - Seong, H. K.

AU - Jung, S. W.

AU - Choi, H. J.

AU - Lee, S. K.

N1 - Funding Information: This work was supported by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2005-005-J07501).

PY - 2006/8/18

Y1 - 2006/8/18

N2 - We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.

AB - We quantitatively characterized the ac dielectrophoresis force on semiconducting gallium nitride (GaN) nanowires in suspension with variations of the ac electric field and frequency. The yield of aligned GaN nanowires increased with increasing ac electric field (up to 20 Vp-p). The yield results indicate that the GaN nanowires were well aligned with a high yield of ∼80% over the entire array in a chip at the frequencies of 10 kHz and 20 MHz. In addition, the electrical properties of GaN nanowires prepared by dielectrophoresis were investigated using conventional three-probe schemes in field-effect transistor structures.

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JO - Chemical Physics Letters

JF - Chemical Physics Letters

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A study of dielectrophoretically aligned gallium nitride nanowires in metal electrodes and their electrical properties

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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