A study of capping layers for sulfur monolayer doping on III-V junctions

J. H. Yum, H. S. Shin, R. Hill, J. Oh, H. D. Lee, Ryan M. Mushinski, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, W. Y. Loh, Wei E. Wang, Paul Kirsch

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17 Citations (Scopus)


Recently, high dosage doping on Si multi-gate field effect transistors and III-V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III-V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.

Original languageEnglish
Article number253514
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2012 Dec 17

Bibliographical note

Funding Information:
This research was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2012-003567). This work was also financially supported in part by the MEST and the NRF through the Human Resource Training Project for Regional Innovation.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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