ITO films were deposited by rf cesium assisted rf plasma sputtering with substrate bias at room temperature. The optimum data of specific resistivity and XRD were obtained in the case of applying to -100 V of negative substrate bias at 0.02 A of target current. In this condition, 4.4X10-4 Ω cm of specific resistivity and 84.3% of transmittance of 550 nm were obtained.
|Number of pages
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - 2003 Jul
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films