A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

Kwang Chon Kim; Seung Hyub Baek; Hyun Jae Kim; Jin Dong Song; Jin Sang Kim

doi:10.1007/s11664-012-1991-z

A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

Kwang Chon Kim, Seung Hyub Baek, Hyun Jae Kim, Jin Dong Song, Jin Sang Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.

Original language	English
Pages (from-to)	2795-2798
Number of pages	4
Journal	Journal of Electronic Materials
Volume	41
Issue number	10
DOIs	https://doi.org/10.1007/s11664-012-1991-z
Publication status	Published - 2012 Oct

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science, and Technology (2011K000616).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-012-1991-z

Cite this

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title = "A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy",

abstract = "Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.",

author = "Kim, {Kwang Chon} and Baek, {Seung Hyub} and Kim, {Hyun Jae} and Song, {Jin Dong} and Kim, {Jin Sang}",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science, and Technology (2011K000616).",

year = "2012",

month = oct,

doi = "10.1007/s11664-012-1991-z",

language = "English",

volume = "41",

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T1 - A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

AU - Kim, Kwang Chon

AU - Baek, Seung Hyub

AU - Kim, Hyun Jae

AU - Song, Jin Dong

AU - Kim, Jin Sang

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science, and Technology (2011K000616).

PY - 2012/10

Y1 - 2012/10

N2 - Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.

AB - Epitaxial CdTe thin films were grown on GaAs/Si(001) substrates by metal-organic chemical vapor deposition using thin GaAs as a buffer layer. The interfaces were investigated using high-resolution transmission electron microscopy and geometric phase analysis strain mapping. It was observed that dislocation cores exist at the CdTe/GaAs interface with periodic distribution. The spacing of the misfit dislocation was measured to be about 2 nm, corresponding to the calculated spacing of a misfit dislocation (2.6 nm) in CdTe/Si with Burgers vector of a[110]/2. From these results, it is suggested that the GaAs buffer layer effectively absorbs the strain originating from the large lattice mismatch between the CdTe thin film and Si substrate with the formation of periodic structural defects.

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A structural investigation of CdTe(001) thin films on GaAs/Si(001) substrates by high-resolution electron microscopy

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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