A Single-Material Logical Junction Based on 2D Crystal PdS2

Mahdi Ghorbani-Asl; Agnieszka Kuc; Pere Miró; Thomas Heine

doi:10.1002/adma.201504274

A Single-Material Logical Junction Based on 2D Crystal PdS₂

Mahdi Ghorbani-Asl, Agnieszka Kuc, Pere Miró, Thomas Heine

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS₂. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

Original language	English
Pages (from-to)	853-856
Number of pages	4
Journal	Advanced Materials
Volume	28
Issue number	5
DOIs	https://doi.org/10.1002/adma.201504274
Publication status	Published - 2016 Feb 3

Bibliographical note

Funding Information:
The authors are grateful to the grants provided by the Deutsche Forschungsgemeinschaft (HE 3543/18-1) and the European Commission (FP7-PEOPLE-2012-ITN MoWSeS, GA 317451).

Publisher Copyright:
Copyright © 2015 Wiley-VCH Verlag GmbH & Co. KGaA.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201504274

Cite this

@article{e91064309cfd4f09aa1830719be85752,

title = "A Single-Material Logical Junction Based on 2D Crystal PdS2",

abstract = "A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS2. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.",

author = "Mahdi Ghorbani-Asl and Agnieszka Kuc and Pere Mir{\'o} and Thomas Heine",

note = "Funding Information: The authors are grateful to the grants provided by the Deutsche Forschungsgemeinschaft (HE 3543/18-1) and the European Commission (FP7-PEOPLE-2012-ITN MoWSeS, GA 317451). Publisher Copyright: Copyright {\textcopyright} 2015 Wiley-VCH Verlag GmbH & Co. KGaA.",

year = "2016",

month = feb,

day = "3",

doi = "10.1002/adma.201504274",

language = "English",

volume = "28",

pages = "853--856",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - A Single-Material Logical Junction Based on 2D Crystal PdS2

AU - Ghorbani-Asl, Mahdi

AU - Kuc, Agnieszka

AU - Miró, Pere

AU - Heine, Thomas

N1 - Funding Information: The authors are grateful to the grants provided by the Deutsche Forschungsgemeinschaft (HE 3543/18-1) and the European Commission (FP7-PEOPLE-2012-ITN MoWSeS, GA 317451). Publisher Copyright: Copyright © 2015 Wiley-VCH Verlag GmbH & Co. KGaA.

PY - 2016/2/3

Y1 - 2016/2/3

N2 - A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS2. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

AB - A single-material logical junction with negligible contact resistance is designed by exploiting quantum confinement effects in 1T PdS2. The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

UR - http://www.scopus.com/inward/record.url?scp=84956687576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956687576&partnerID=8YFLogxK

U2 - 10.1002/adma.201504274

DO - 10.1002/adma.201504274

M3 - Article

AN - SCOPUS:84956687576

SN - 0935-9648

VL - 28

SP - 853

EP - 856

JO - Advanced Materials

JF - Advanced Materials

IS - 5

ER -