A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Sung Pyo Park; Hong Jae Kim; Young Jun Tak; Seonghwan Hong; Hee Jun Kim; Jong Sun Choi; Hyun Jae Kim

doi:10.1002/sdtp.10823

A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Sung Pyo Park, Hong Jae Kim, Young Jun Tak, Seonghwan Hong, Hee Jun Kim, Jong Sun Choi, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.

Original language	English
Pages (from-to)	1136-1139
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	47
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.10823
Publication status	Published - 2016
Event	54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 - San Francisco, United States Duration: 2016 May 22 → 2016 May 27

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© (2016) by SID-the Society for Information Display. All rights reserved.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.10823

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title = "A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide",

abstract = "We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.",

author = "Park, {Sung Pyo} and Kim, {Hong Jae} and Tak, {Young Jun} and Seonghwan Hong and Kim, {Hee Jun} and Choi, {Jong Sun} and Kim, {Hyun Jae}",

note = "Publisher Copyright: {\textcopyright} (2016) by SID-the Society for Information Display. All rights reserved.; 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016 ; Conference date: 22-05-2016 Through 27-05-2016",

year = "2016",

doi = "10.1002/sdtp.10823",

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AU - Park, Sung Pyo

AU - Kim, Hong Jae

AU - Tak, Young Jun

AU - Hong, Seonghwan

AU - Kim, Hee Jun

AU - Choi, Jong Sun

AU - Kim, Hyun Jae

PY - 2016

Y1 - 2016

N2 - We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.

AB - We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential The stability and field-effect mobility of IGZO TFTs were significantly improved by controlling dipping time.

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DO - 10.1002/sdtp.10823

M3 - Conference article

AN - SCOPUS:85019092913

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SP - 1136

EP - 1139

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 54th Annual SID Symposium, Seminar, and Exhibition 2016, Display Week 2016

Y2 - 22 May 2016 through 27 May 2016

ER -

A simple dipping method to improve positive bias stress stability of In-Ga-Zn-O thin-film transistors using hydrogen peroxide

Abstract

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