A silicon-molecular hybrid memory device

K. H. Yoo; K. S. Park; Jinhee Kim; Myungsoo Lee; Jung Woo Kim

doi:10.1088/0957-4484/15/11/016

A silicon-molecular hybrid memory device

K. H. Yoo, K. S. Park, Jinhee Kim, Myungsoo Lee, Jung Woo Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

Original language	English
Pages (from-to)	1472-1474
Number of pages	3
Journal	Nanotechnology
Volume	15
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/15/11/016
Publication status	Published - 2004 Nov

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/15/11/016

Cite this

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title = "A silicon-molecular hybrid memory device",

abstract = "We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.",

author = "Yoo, {K. H.} and Park, {K. S.} and Jinhee Kim and Myungsoo Lee and Kim, {Jung Woo}",

year = "2004",

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AU - Kim, Jung Woo

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N2 - We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

AB - We have fabricated MOS memory devices based on coil-rod-coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.

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JO - Nanotechnology

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A silicon-molecular hybrid memory device

Abstract

All Science Journal Classification (ASJC) codes

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