Abstract
In this paper, a read voltage modulation technique (RVM) is proposed to compensate for leakage current in a cross-point phase change random access memory with an ovonic threshold switch (OTS-PRAM). The leakage current, the sum of off-state current (IOFF) of OTS selectors, causes the voltage drop and increases the variation of sensing voltage (VSENSE) which is the electric potential difference between a selected bit line (BL) and a word line (WL). Eventually, the voltage drop reduces the sensing margin (SM). To compensate for the BL voltage drop, the proposed RVM reduces the VSENSE variation by applying an adaptive voltage to the selected WL. Thus, a sufficient SM is guaranteed. HSPICE simulation results with industry-compatible 65-nm model parameters show that the cross-point OTS-PRAM with the proposed RVM achieved a remarkable improvement in SM (from 105 mV to 395 mV) in high BL leakage current condition (51.3 uA).
| Original language | English |
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| Title of host publication | 2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781728133201 |
| Publication status | Published - 2020 |
| Event | 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online Duration: 2020 Oct 10 → 2020 Oct 21 |
Publication series
| Name | Proceedings - IEEE International Symposium on Circuits and Systems |
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| Volume | 2020-October |
| ISSN (Print) | 0271-4310 |
Conference
| Conference | 52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 |
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| City | Virtual, Online |
| Period | 20/10/10 → 20/10/21 |
Bibliographical note
Publisher Copyright:© 2020 IEEE
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering