A precision DTMOST-based temperature sensor

Kamran Souri; Youngcheol Chae; Youri Ponomarev; Kofi A.A. Makinwa

doi:10.1109/ESSCIRC.2011.6044961

A precision DTMOST-based temperature sensor

Kamran Souri, Youngcheol Chae, Youri Ponomarev, Kofi A.A. Makinwa

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

28 Citations (Scopus)

Abstract

This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.

Original language	English
Title of host publication	ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference
Pages	279-282
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2011.6044961
Publication status	Published - 2011
Event	37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland Duration: 2011 Sept 12 → 2011 Sept 16

Publication series

Name	European Solid-State Circuits Conference
ISSN (Print)	1930-8833

Other

Other	37th European Solid-State Circuits Conference, ESSCIRC 2011
Country/Territory	Finland
City	Helsinki
Period	11/9/12 → 11/9/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSCIRC.2011.6044961

Cite this

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title = "A precision DTMOST-based temperature sensor",

abstract = "This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.",

author = "Kamran Souri and Youngcheol Chae and Youri Ponomarev and Makinwa, {Kofi A.A.}",

year = "2011",

doi = "10.1109/ESSCIRC.2011.6044961",

language = "English",

isbn = "9781457707018",

series = "European Solid-State Circuits Conference",

pages = "279--282",

booktitle = "ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference",

note = "37th European Solid-State Circuits Conference, ESSCIRC 2011 ; Conference date: 12-09-2011 Through 16-09-2011",

}

Souri, K, Chae, Y, Ponomarev, Y & Makinwa, KAA 2011, A precision DTMOST-based temperature sensor. in ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference., 6044961, European Solid-State Circuits Conference, pp. 279-282, 37th European Solid-State Circuits Conference, ESSCIRC 2011, Helsinki, Finland, 11/9/12. https://doi.org/10.1109/ESSCIRC.2011.6044961

TY - GEN

T1 - A precision DTMOST-based temperature sensor

AU - Souri, Kamran

AU - Chae, Youngcheol

AU - Ponomarev, Youri

AU - Makinwa, Kofi A.A.

PY - 2011

Y1 - 2011

N2 - This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.

AB - This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.

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U2 - 10.1109/ESSCIRC.2011.6044961

DO - 10.1109/ESSCIRC.2011.6044961

M3 - Conference contribution

AN - SCOPUS:82955201551

SN - 9781457707018

T3 - European Solid-State Circuits Conference

SP - 279

EP - 282

BT - ESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference

T2 - 37th European Solid-State Circuits Conference, ESSCIRC 2011

Y2 - 12 September 2011 through 16 September 2011

ER -

A precision DTMOST-based temperature sensor

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