A precision DTMOST-based temperature sensor

Kamran Souri, Youngcheol Chae, Youri Ponomarev, Kofi A.A. Makinwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

28 Citations (Scopus)


This paper describes a precision temperature sensor based on dynamic threshold MOS (DTMOS) transistors. By using the DTMOS configuration, i.e. by connecting the body of a MOSFET to its gate, a near-ideal diode characteristic can be realized. The resulting device can then replace the substrate PNP used in most precision temperature sensors. After a two-temperature trim, the proposed sensor achieves an inaccuracy of ±0.1°C (3σ) over the military temperature range: -55°C to 125°C. This represents a 5x improvement in accuracy over previously reported MOSFET-based temperature sensors. The chip was implemented in a 0.16-μm standard CMOS process. At a conversion rate of 5Hz, it achieves a resolution of 33mK, while dissipating only 8.6 μW from a 1.8V supply.

Original languageEnglish
Title of host publicationESSCIRC 2011 - Proceedings of the 37th European Solid-State Circuits Conference
Number of pages4
Publication statusPublished - 2011
Event37th European Solid-State Circuits Conference, ESSCIRC 2011 - Helsinki, Finland
Duration: 2011 Sept 122011 Sept 16

Publication series

NameEuropean Solid-State Circuits Conference
ISSN (Print)1930-8833


Other37th European Solid-State Circuits Conference, ESSCIRC 2011

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering


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