A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation

Hyun Kook Park; Tae Woo Oh; Seong Ook Jung

doi:10.1109/ICECS.2018.8617915

A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation

Hyun Kook Park, Tae Woo Oh, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

For application of PRAM to IoT devices, it is necessary to reduce write energy consumption of PRAM. In a sub-20nm PRAM technology, the optimization of heater material and structure was performed with the Sentaurus TCAD simulator, which notices that the TiN is more preferred than the Poly Si or W and the wall structure has better write energy efficiency than the confined structure. In addition, a novel heat-aware write method (HAW) is proposed, which controls the write current and voltage considering with the heat generated by the heater. With the HSPICE simulation using 0.25- μ m industry-compatible model, PRAM cell achieves the write energy improvement by 22%, 19%, and 36% in the case of the wall structure with TiN, the proposed HAW, and both, respectively.

Original language	English
Title of host publication	2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	273-276
Number of pages	4
ISBN (Electronic)	9781538695623
DOIs	https://doi.org/10.1109/ICECS.2018.8617915
Publication status	Published - 2018 Jul 2
Event	25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 - Bordeaux, France Duration: 2018 Dec 9 → 2018 Dec 12

Publication series

Name	2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018

Conference

Conference	25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
Country/Territory	France
City	Bordeaux
Period	18/12/9 → 18/12/12

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Instrumentation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICECS.2018.8617915

Cite this

Park, H. K., Oh, T. W., & Jung, S. O. (2018). A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. In 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 (pp. 273-276). Article 8617915 (2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2018.8617915

Park, Hyun Kook ; Oh, Tae Woo ; Jung, Seong Ook. / A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 273-276 (2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018).

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title = "A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation",

abstract = "For application of PRAM to IoT devices, it is necessary to reduce write energy consumption of PRAM. In a sub-20nm PRAM technology, the optimization of heater material and structure was performed with the Sentaurus TCAD simulator, which notices that the TiN is more preferred than the Poly Si or W and the wall structure has better write energy efficiency than the confined structure. In addition, a novel heat-aware write method (HAW) is proposed, which controls the write current and voltage considering with the heat generated by the heater. With the HSPICE simulation using 0.25- μ m industry-compatible model, PRAM cell achieves the write energy improvement by 22%, 19%, and 36% in the case of the wall structure with TiN, the proposed HAW, and both, respectively.",

keywords = "Internet of Things, heater material, heater structure, low power, phase change memory, write method",

author = "Park, {Hyun Kook} and Oh, {Tae Woo} and Jung, {Seong Ook}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 ; Conference date: 09-12-2018 Through 12-12-2018",

year = "2018",

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doi = "10.1109/ICECS.2018.8617915",

language = "English",

series = "2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018",

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Park, HK, Oh, TW & Jung, SO 2018, A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. in 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018., 8617915, 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018, Institute of Electrical and Electronics Engineers Inc., pp. 273-276, 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018, Bordeaux, France, 18/12/9. https://doi.org/10.1109/ICECS.2018.8617915

A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. / Park, Hyun Kook; Oh, Tae Woo; Jung, Seong Ook.
2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 273-276 8617915 (2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - For application of PRAM to IoT devices, it is necessary to reduce write energy consumption of PRAM. In a sub-20nm PRAM technology, the optimization of heater material and structure was performed with the Sentaurus TCAD simulator, which notices that the TiN is more preferred than the Poly Si or W and the wall structure has better write energy efficiency than the confined structure. In addition, a novel heat-aware write method (HAW) is proposed, which controls the write current and voltage considering with the heat generated by the heater. With the HSPICE simulation using 0.25- μ m industry-compatible model, PRAM cell achieves the write energy improvement by 22%, 19%, and 36% in the case of the wall structure with TiN, the proposed HAW, and both, respectively.

AB - For application of PRAM to IoT devices, it is necessary to reduce write energy consumption of PRAM. In a sub-20nm PRAM technology, the optimization of heater material and structure was performed with the Sentaurus TCAD simulator, which notices that the TiN is more preferred than the Poly Si or W and the wall structure has better write energy efficiency than the confined structure. In addition, a novel heat-aware write method (HAW) is proposed, which controls the write current and voltage considering with the heat generated by the heater. With the HSPICE simulation using 0.25- μ m industry-compatible model, PRAM cell achieves the write energy improvement by 22%, 19%, and 36% in the case of the wall structure with TiN, the proposed HAW, and both, respectively.

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ER -

Park HK, Oh TW, Jung SO. A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation. In 2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 273-276. 8617915. (2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018). doi: 10.1109/ICECS.2018.8617915

A Novel Heat-Aware Write Method with Optimized Heater Material and Structure in sub-20 nm PRAM for Low Energy Operation

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

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Cite this