A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition

Byung Du Ahn, Hyun Soo Shin, Gun Hee Kim, Jin Seong Park, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	3
Publication status	Published - 2009 Mar

Cite this

@article{7d42ca0c01cc47bba6b1e94936fd3ca0,

title = "A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition",

author = "Ahn, {Byung Du} and Shin, {Hyun Soo} and Kim, {Gun Hee} and Park, {Jin Seong} and Kim, {Heon Je}",

year = "2009",

month = mar,

language = "English",

volume = "48",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}