A non-volatile buffered main memory using phase-change RAM

Do Heon Lee; Chung Pyo Hong; Shin Dug Kim

doi:10.1007/978-94-007-5860-5_53

A non-volatile buffered main memory using phase-change RAM

Do Heon Lee, Chung Pyo Hong, Shin Dug Kim

College of Computing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.

Original language	English
Title of host publication	IT Convergence and Security 2012
Pages	433-439
Number of pages	7
DOIs	https://doi.org/10.1007/978-94-007-5860-5_53
Publication status	Published - 2013
Event	International Conference on IT Convergence and Security, ICITCS 2012 - Pyeong Chang, Korea, Republic of Duration: 2012 Dec 5 → 2012 Dec 7

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	215 LNEE
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Other

Other	International Conference on IT Convergence and Security, ICITCS 2012
Country/Territory	Korea, Republic of
City	Pyeong Chang
Period	12/12/5 → 12/12/7

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-94-007-5860-5_53

Cite this

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title = "A non-volatile buffered main memory using phase-change RAM",

abstract = "The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.",

author = "Lee, {Do Heon} and Hong, {Chung Pyo} and Kim, {Shin Dug}",

year = "2013",

doi = "10.1007/978-94-007-5860-5_53",

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series = "Lecture Notes in Electrical Engineering",

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note = "International Conference on IT Convergence and Security, ICITCS 2012 ; Conference date: 05-12-2012 Through 07-12-2012",

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AU - Lee, Do Heon

AU - Hong, Chung Pyo

AU - Kim, Shin Dug

PY - 2013

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N2 - The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.

AB - The new trends of memory semi-conductor technology are changing and developing. Phase-Change RAM (PRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) are going to take center stage of main memory material of new computer systems in next decade. PRAM also has higher dense, it can keep data about four times more than DRAM. But some problems caused when PRAM uses as a main memory directly. So we suggest Pre-load cache and Assistant buffer. It reduces main memory access and overcome low read speed of PRAM consequently. To reduce write operation also, we propose Assistant buffer. Assistant buffer keeps evicted data and impedes write operation, and facilitates more rapid response about required data when cache misses. As a result of our experimentation, overall performance is decrement of main memory accesses approximately 50 %.

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A non-volatile buffered main memory using phase-change RAM

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