A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

Byeong Yun Oh; Ji Hun Lim; Kang Min Lee; Young Hwan Kim; Byoung Yong Kim; Jeong Min Han; Sang Keuk Lee; Dae Shik Seo; Jeong Yeon Hwang

doi:10.1149/1.2990221

A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

Byeong Yun Oh, Ji Hun Lim, Kang Min Lee, Young Hwan Kim, Byoung Yong Kim, Jeong Min Han, Sang Keuk Lee, Dae Shik Seo, Jeong Yeon Hwang

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

Original language	English
Pages (from-to)	H331-H334
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1149/1.2990221
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2990221

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title = "A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment",

abstract = "This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.",

author = "Oh, {Byeong Yun} and Lim, {Ji Hun} and Lee, {Kang Min} and Kim, {Young Hwan} and Kim, {Byoung Yong} and Han, {Jeong Min} and Lee, {Sang Keuk} and Seo, {Dae Shik} and Hwang, {Jeong Yeon}",

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T1 - A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

AU - Oh, Byeong Yun

AU - Lim, Ji Hun

AU - Lee, Kang Min

AU - Kim, Young Hwan

AU - Kim, Byoung Yong

AU - Han, Jeong Min

AU - Lee, Sang Keuk

AU - Seo, Dae Shik

AU - Hwang, Jeong Yeon

PY - 2008

Y1 - 2008

N2 - This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

AB - This paper describes a no-bias-bend (NBB) π cell based on a homeotropic polyimide layer with a midrange pretilt angle produced using the nonrubbing ion-beam (IB) method. Various pretilt angles in the range 1-89° were easily achieved depending on the IB exposure time. A chemical structure analysis confirmed that preferential reorientation of the carbon network was created by selectively breaking the weakest π bonds of the CO double bonds. The threshold voltage and favorable response time of the NBB π cell without an initial critical voltage were 0.7 V and 6.6 ms.

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A no-bias-bend nematic LCD with a medium pretilt angle controlled by ion-beam bombardment

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