A new repair scheme for TSV-based 3D memory using base die repair cells

Donghyun Han; Hayoung Lee; Donghyun Kim; Sungho Kang

doi:10.1109/ISOCC.2017.8368804

A new repair scheme for TSV-based 3D memory using base die repair cells

Donghyun Han, Hayoung Lee, Donghyun Kim, Sungho Kang

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

Original language	English
Title of host publication	Proceedings - International SoC Design Conference 2017, ISOCC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	11-12
Number of pages	2
ISBN (Electronic)	9781538622858
DOIs	https://doi.org/10.1109/ISOCC.2017.8368804
Publication status	Published - 2018 May 29
Event	14th International SoC Design Conference, ISOCC 2017 - Seoul, Korea, Republic of Duration: 2017 Nov 5 → 2017 Nov 8

Publication series

Name	Proceedings - International SoC Design Conference 2017, ISOCC 2017

Other

Other	14th International SoC Design Conference, ISOCC 2017
Country/Territory	Korea, Republic of
City	Seoul
Period	17/11/5 → 17/11/8

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISOCC.2017.8368804

Cite this

Han, D., Lee, H., Kim, D., & Kang, S. (2018). A new repair scheme for TSV-based 3D memory using base die repair cells. In Proceedings - International SoC Design Conference 2017, ISOCC 2017 (pp. 11-12). (Proceedings - International SoC Design Conference 2017, ISOCC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2017.8368804

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title = "A new repair scheme for TSV-based 3D memory using base die repair cells",

abstract = "In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.",

author = "Donghyun Han and Hayoung Lee and Donghyun Kim and Sungho Kang",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 14th International SoC Design Conference, ISOCC 2017 ; Conference date: 05-11-2017 Through 08-11-2017",

year = "2018",

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day = "29",

doi = "10.1109/ISOCC.2017.8368804",

language = "English",

series = "Proceedings - International SoC Design Conference 2017, ISOCC 2017",

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}

Han, D, Lee, H, Kim, D & Kang, S 2018, A new repair scheme for TSV-based 3D memory using base die repair cells. in Proceedings - International SoC Design Conference 2017, ISOCC 2017. Proceedings - International SoC Design Conference 2017, ISOCC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 11-12, 14th International SoC Design Conference, ISOCC 2017, Seoul, Korea, Republic of, 17/11/5. https://doi.org/10.1109/ISOCC.2017.8368804

A new repair scheme for TSV-based 3D memory using base die repair cells. / Han, Donghyun; Lee, Hayoung; Kim, Donghyun et al.
Proceedings - International SoC Design Conference 2017, ISOCC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 11-12 (Proceedings - International SoC Design Conference 2017, ISOCC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A new repair scheme for TSV-based 3D memory using base die repair cells

AU - Han, Donghyun

AU - Lee, Hayoung

AU - Kim, Donghyun

AU - Kang, Sungho

PY - 2018/5/29

Y1 - 2018/5/29

N2 - In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

AB - In this paper, a new repair scheme which consists of a new repair algorithm and a base die structure of TSV based 3D memory is proposed. The traditional repair process in 3D memory uses extra cells in each memory layer. This paper proposes a new redundancy cell structure for repairing memory layers using spare cells on the base die which consists of solution memory, spare CAM and a control structure. The experimental results show that the repair rate of the new repair scheme is better than that of the inter-die method.

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M3 - Conference contribution

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T3 - Proceedings - International SoC Design Conference 2017, ISOCC 2017

SP - 11

EP - 12

BT - Proceedings - International SoC Design Conference 2017, ISOCC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 14th International SoC Design Conference, ISOCC 2017

Y2 - 5 November 2017 through 8 November 2017

ER -

A new repair scheme for TSV-based 3D memory using base die repair cells

Abstract

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Bibliographical note

All Science Journal Classification (ASJC) codes

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