A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Myung Koo Kang; Si Joon Kim; Hyun Jae Kim

doi:10.1063/1.3515856

A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Myung Koo Kang, Si Joon Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. The properties of TFTs with channel direction parallel to the lateral growth (parallel TFTs) are superior to those of TFTs with a perpendicular channel direction (perpendicular TFTs). The multi-channel structure proposed in this paper, which directly incorporates a parallel component in a perpendicular TFT, exhibits greatly improved properties. This MC structure can be applied not only to p-Si produced by SLS, but also to any material with property anisotropy.

Original language	English
Article number	202103
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3515856
Publication status	Published - 2010 Nov 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3515856

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A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Abstract

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