Abstract
This paper proposes a new memory access control scheme called delayed precharge scheme, to improve the performance of on-chip DRAM's by increasing the DRAM page hit ratio for multiple block accesses. This architecture shows higher performance than the hierarchical multi-bank architecture as well as the conventional bank architecture by execution-driven simulation. The proposed scheme could reduce the cache refill time and CPI obtained by the conventional DRAM by 26.9% and 6.2% respectively in typical applications.
Original language | English |
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Title of host publication | AP-ASIC 1999 - 1st IEEE Asia Pacific Conference on ASICs |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 384-387 |
Number of pages | 4 |
ISBN (Print) | 0780357051, 9780780357051 |
DOIs | |
Publication status | Published - 1999 |
Event | 1st IEEE Asia Pacific Conference on ASICs, AP-ASIC 1999 - Seoul, Korea, Republic of Duration: 1999 Aug 23 → 1999 Aug 25 |
Publication series
Name | AP-ASIC 1999 - 1st IEEE Asia Pacific Conference on ASICs |
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Other
Other | 1st IEEE Asia Pacific Conference on ASICs, AP-ASIC 1999 |
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Country/Territory | Korea, Republic of |
City | Seoul |
Period | 99/8/23 → 99/8/25 |
Bibliographical note
Publisher Copyright:© 1999 IEEE.
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
- Electronic, Optical and Magnetic Materials