A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

D. H. Kim; J. Y. Kim; M. Huh; Y. S. Hwang; J. M. Park; D. H. Han; D. I. Kim; M. H. Cho; B. H. Lee; H. K. Hwang; J. W. Song; N. J. Kang; G. W. Ha; S. S. Song; M. S. Shim; S. E. Kim; J. M. Kwon; B. J. Park; H. J. Oh; H. J. Kim; D. S. Woo; M. Y. Jeong; Y. I. Kim; Y. S. Lee; H. J. Kim; J. C. Shin; J. W. Seo; S. S. Jeong; K. H. Yoon; T. H. Ahn; J. B. Lee; Y. W. Hyung; S. J. Park; H. S. Kim; W. T. Choi; G. Y. Jin; Y. G. Park; Kinam Kim

doi:10.1109/iedm.2004.1419067

A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

D. H. Kim, J. Y. Kim, M. Huh, Y. S. Hwang, J. M. Park, D. H. Han, D. I. Kim, M. H. Cho, B. H. Lee, H. K. Hwang, J. W. Song, N. J. Kang, G. W. Ha, S. S. Song, M. S. Shim, S. E. Kim, J. M. Kwon, B. J. Park, H. J. Oh, H. J. KimD. S. Woo, M. Y. Jeong, Y. I. Kim, Y. S. Lee, H. J. Kim, J. C. Shin, J. W. Seo, S. S. Jeong, K. H. Yoon, T. H. Ahn, J. B. Lee, Y. W. Hyung, S. J. Park, H. S. Kim, W. T. Choi, G. Y. Jin, Y. G. Park, Kinam Kim

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si₃N₄, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

Original language	English
Pages (from-to)	69-72
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/iedm.2004.1419067
Publication status	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1109/iedm.2004.1419067

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Kim, D. H., Kim, J. Y., Huh, M., Hwang, Y. S., Park, J. M., Han, D. H., Kim, D. I., Cho, M. H., Lee, B. H., Hwang, H. K., Song, J. W., Kang, N. J., Ha, G. W., Song, S. S., Shim, M. S., Kim, S. E., Kwon, J. M., Park, B. J., Oh, H. J., ... Kim, K. (2004). A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs. Technical Digest - International Electron Devices Meeting, IEDM, 69-72. https://doi.org/10.1109/iedm.2004.1419067

@article{975edfb108cb4374b9f6269720cd3ac3,

title = "A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs",

abstract = "Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.",

author = "Kim, {D. H.} and Kim, {J. Y.} and M. Huh and Hwang, {Y. S.} and Park, {J. M.} and Han, {D. H.} and Kim, {D. I.} and Cho, {M. H.} and Lee, {B. H.} and Hwang, {H. K.} and Song, {J. W.} and Kang, {N. J.} and Ha, {G. W.} and Song, {S. S.} and Shim, {M. S.} and Kim, {S. E.} and Kwon, {J. M.} and Park, {B. J.} and Oh, {H. J.} and Kim, {H. J.} and Woo, {D. S.} and Jeong, {M. Y.} and Kim, {Y. I.} and Lee, {Y. S.} and Kim, {H. J.} and Shin, {J. C.} and Seo, {J. W.} and Jeong, {S. S.} and Yoon, {K. H.} and Ahn, {T. H.} and Lee, {J. B.} and Hyung, {Y. W.} and Park, {S. J.} and Kim, {H. S.} and Choi, {W. T.} and Jin, {G. Y.} and Park, {Y. G.} and Kinam Kim",

year = "2004",

doi = "10.1109/iedm.2004.1419067",

language = "English",

pages = "69--72",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

Kim, DH, Kim, JY, Huh, M, Hwang, YS, Park, JM, Han, DH, Kim, DI, Cho, MH, Lee, BH, Hwang, HK, Song, JW, Kang, NJ, Ha, GW, Song, SS, Shim, MS, Kim, SE, Kwon, JM, Park, BJ, Oh, HJ, Kim, HJ, Woo, DS, Jeong, MY, Kim, YI, Lee, YS, Kim, HJ, Shin, JC, Seo, JW, Jeong, SS, Yoon, KH, Ahn, TH, Lee, JB, Hyung, YW, Park, SJ, Kim, HS, Choi, WT, Jin, GY, Park, YG & Kim, K 2004, 'A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs', Technical Digest - International Electron Devices Meeting, IEDM, pp. 69-72. https://doi.org/10.1109/iedm.2004.1419067

TY - JOUR

T1 - A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

AU - Kim, D. H.

AU - Kim, J. Y.

AU - Huh, M.

AU - Hwang, Y. S.

AU - Park, J. M.

AU - Han, D. H.

AU - Kim, D. I.

AU - Cho, M. H.

AU - Lee, B. H.

AU - Hwang, H. K.

AU - Song, J. W.

AU - Kang, N. J.

AU - Ha, G. W.

AU - Song, S. S.

AU - Shim, M. S.

AU - Kim, S. E.

AU - Kwon, J. M.

AU - Park, B. J.

AU - Oh, H. J.

AU - Kim, H. J.

AU - Woo, D. S.

AU - Jeong, M. Y.

AU - Kim, Y. I.

AU - Lee, Y. S.

AU - Kim, H. J.

AU - Shin, J. C.

AU - Seo, J. W.

AU - Jeong, S. S.

AU - Yoon, K. H.

AU - Ahn, T. H.

AU - Lee, J. B.

AU - Hyung, Y. W.

AU - Park, S. J.

AU - Kim, H. S.

AU - Choi, W. T.

AU - Jin, G. Y.

AU - Park, Y. G.

AU - Kim, Kinam

PY - 2004

Y1 - 2004

N2 - Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

AB - Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

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UR - http://www.scopus.com/inward/citedby.url?scp=21644432917&partnerID=8YFLogxK

U2 - 10.1109/iedm.2004.1419067

DO - 10.1109/iedm.2004.1419067

M3 - Conference article

AN - SCOPUS:21644432917

SN - 0163-1918

SP - 69

EP - 72

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

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