Abstract
In this paper, we present a receiver front-end and a frequency source suitable for wireless sensor network applications, in which power consumption is severely restricted under several milliwatts. For such an extremely low-power receiver, current-reusing and frequency multiplying schemes are proposed for both the RF front-end and frequency source. The proposed front-end achieves a conversion gain of 30.5 dB and a noise figure of 10.2 dB at the 10-MHz intermediate frequency (IF), taking only 500-μA bias current from a 1.0-V supply voltage. The measured phase noise of the fabricated frequency source is - 115.83 dBc/Hz at 1 MHz offset from a 2.2-GHz center frequency, taking 840 μA from a 0.7-V supply. The front-end performance is compared with the previously reported low-power front-ends operating in similar frequency ranges.
| Original language | English |
|---|---|
| Pages (from-to) | 1012-1021 |
| Number of pages | 10 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 42 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2007 May |
Bibliographical note
Funding Information:Manuscript received September 18, 2006; revised January 8, 2007. This work was supported by the University IT Research Center (ITRC) project. T. Song is with the Design Team V, Memory R&D Division, Hynix Semiconductor Inc., Kyoungki-Do 467-701, Korea (e-mail: taeksang.song@hynix.com; purelure@kaist.ac.kr). H.-S. Oh is with the RF Development Team, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd., Kyoungki-Do 446-771, Korea. E. Yoon is with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. S. Hong is with the Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea. Digital Object Identifier 10.1109/JSSC.2007.894338
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering