A low-loss silicon-on-silicon DC-110-GHz resonance-free package

Byung Wook Min; Gabriel M. Rebeiz

doi:10.1109/TMTT.2005.862655

A low-loss silicon-on-silicon DC-110-GHz resonance-free package

Byung Wook Min, Gabriel M. Rebeiz

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

This paper reports on the design and fabrication of a hermetic-compatible wafer-scale package for microwave and millimeter-wave devices. Coplanar waveguide (CPW) lines on a high-resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric inter-layer for CPW feed-throughs underneath the gold sealing ring. A 130-μm-high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF devices. The designed feed-through has an insertion loss of 0.05-0.26 dB at dc-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic resonance and leakage of the package. The whole packaged CPW line has a measured insertion loss of 0.2-0.7 dB and return loss of <-20 dB at dc-110 GHz.

Original language	English
Pages (from-to)	710-716
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	54
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2005.862655
Publication status	Published - 2006 Feb

Bibliographical note

Funding Information:
Manuscript received July 17, 2005; revised October 13, 2005. This work was supported by the U.S. Army Research Laboratories under the Collaborative Technology Agreement.

Funding Information:
The authors acknowledge the support of E. Adler and E. Viveiros, both with the U.S. Army Research Laboratories, Adelphi, MD. The authors also thank Dr. Y. Lee, Dr. J. Chae, S. Lee, and Dr. K. Entesari, all with The University of Michigan at Ann Arbor, for help in the fabrication. The authors further thank J. Chee and Dr. X. Gong, both with Purdue University, West Lafayette, IN, for help with measurements.

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TMTT.2005.862655

Cite this

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abstract = "This paper reports on the design and fabrication of a hermetic-compatible wafer-scale package for microwave and millimeter-wave devices. Coplanar waveguide (CPW) lines on a high-resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric inter-layer for CPW feed-throughs underneath the gold sealing ring. A 130-μm-high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF devices. The designed feed-through has an insertion loss of 0.05-0.26 dB at dc-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic resonance and leakage of the package. The whole packaged CPW line has a measured insertion loss of 0.2-0.7 dB and return loss of <-20 dB at dc-110 GHz.",

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A low-loss silicon-on-silicon DC-110-GHz resonance-free package

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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