We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our model consists of three blocks: one for parasitic components due to interconnects and pads, one for the electrical elements of the core p-n junction, and the third for a lossy LC tank representing Si MRM optical modulation characteristics. Model parameter values are extracted from measurement of a fabricated Si MRM device. Simulated modulation characteristics with our equivalent circuit show very good agreement with measured results. Using our model, we can analyze Si MRM modulation frequency response characteristics and perform gain-bandwidth product optimization of the entire Si photonic transmitter composed of a Si MRM and electrical driver circuits.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2017 Mar|
Bibliographical noteFunding Information:
Thisworkwas supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry and Energy under Project 10065666.
© 2017 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering