A linear equivalent circuit model for depletion-type silicon microring modulators

Myungjin Shin; Yoojin Ban; Byung Min Yu; Min Hyeong Kim; Jinsoo Rhim; Lars Zimmermann; Woo Young Choi

doi:10.1109/TED.2017.2648861

A linear equivalent circuit model for depletion-type silicon microring modulators

Myungjin Shin, Yoojin Ban, Byung Min Yu, Min Hyeong Kim, Jinsoo Rhim, Lars Zimmermann, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our model consists of three blocks: one for parasitic components due to interconnects and pads, one for the electrical elements of the core p-n junction, and the third for a lossy LC tank representing Si MRM optical modulation characteristics. Model parameter values are extracted from measurement of a fabricated Si MRM device. Simulated modulation characteristics with our equivalent circuit show very good agreement with measured results. Using our model, we can analyze Si MRM modulation frequency response characteristics and perform gain-bandwidth product optimization of the entire Si photonic transmitter composed of a Si MRM and electrical driver circuits.

Original language	English
Article number	7835671
Pages (from-to)	1140-1145
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	3
DOIs	https://doi.org/10.1109/TED.2017.2648861
Publication status	Published - 2017 Mar

Bibliographical note

Funding Information:
Thisworkwas supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry and Energy under Project 10065666.

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2648861

Cite this

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title = "A linear equivalent circuit model for depletion-type silicon microring modulators",

abstract = "We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our model consists of three blocks: one for parasitic components due to interconnects and pads, one for the electrical elements of the core p-n junction, and the third for a lossy LC tank representing Si MRM optical modulation characteristics. Model parameter values are extracted from measurement of a fabricated Si MRM device. Simulated modulation characteristics with our equivalent circuit show very good agreement with measured results. Using our model, we can analyze Si MRM modulation frequency response characteristics and perform gain-bandwidth product optimization of the entire Si photonic transmitter composed of a Si MRM and electrical driver circuits.",

author = "Myungjin Shin and Yoojin Ban and Yu, {Byung Min} and Kim, {Min Hyeong} and Jinsoo Rhim and Lars Zimmermann and Choi, {Woo Young}",

note = "Funding Information: Thisworkwas supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry and Energy under Project 10065666. Publisher Copyright: {\textcopyright} 2017 IEEE.",

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AU - Shin, Myungjin

AU - Ban, Yoojin

AU - Yu, Byung Min

AU - Kim, Min Hyeong

AU - Rhim, Jinsoo

AU - Zimmermann, Lars

AU - Choi, Woo Young

N1 - Funding Information: Thisworkwas supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry and Energy under Project 10065666. Publisher Copyright: © 2017 IEEE.

PY - 2017/3

Y1 - 2017/3

N2 - We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our model consists of three blocks: one for parasitic components due to interconnects and pads, one for the electrical elements of the core p-n junction, and the third for a lossy LC tank representing Si MRM optical modulation characteristics. Model parameter values are extracted from measurement of a fabricated Si MRM device. Simulated modulation characteristics with our equivalent circuit show very good agreement with measured results. Using our model, we can analyze Si MRM modulation frequency response characteristics and perform gain-bandwidth product optimization of the entire Si photonic transmitter composed of a Si MRM and electrical driver circuits.

AB - We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our model consists of three blocks: one for parasitic components due to interconnects and pads, one for the electrical elements of the core p-n junction, and the third for a lossy LC tank representing Si MRM optical modulation characteristics. Model parameter values are extracted from measurement of a fabricated Si MRM device. Simulated modulation characteristics with our equivalent circuit show very good agreement with measured results. Using our model, we can analyze Si MRM modulation frequency response characteristics and perform gain-bandwidth product optimization of the entire Si photonic transmitter composed of a Si MRM and electrical driver circuits.

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A linear equivalent circuit model for depletion-type silicon microring modulators

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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