This paper proposes a high speed modified Dickson charge pump. The conventional circuit has an auxiliary stage to control the gate of the transistor to the output load. However, the auxiliary stage's voltage level has a problem with a threshold voltage loss due to its diode-connected n-channel metal oxide semiconductor (NMOS) transistor configuration. The proposed circuit demonstrates a scheme with p-channel metal oxide semiconductor (PMOS) transistor configuration instead of the conventional NMOS diode connection in the auxiliary stage. Using this method, the threshold voltage loss is eliminated in the voltage level of the auxiliary stage. The gates of the main transfer transistors are controlled more effectively, leading to the proposed circuit's better performances. The bulk connection of PMOS transistor in the auxiliary stage is also modified to suppress the parasitic bipolar effect. The HSPICE simulations with the TSMC 0.18 µm process technology indicate and verify that the proposed circuit achieves better performances in pump-up speed, output ripple peak-to-peak voltage, and power efficiency compared to those obtained for the conventional schemes.
|Title of host publication
|2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
|Institute of Electrical and Electronics Engineers Inc.
|Published - 2021
|53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of
Duration: 2021 May 22 → 2021 May 28
|Proceedings - IEEE International Symposium on Circuits and Systems
|53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
|Korea, Republic of
|21/5/22 → 21/5/28
Bibliographical notePublisher Copyright:
© 2021 IEEE
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering