A HfO2 thin film resistive switch based on conducting atomic force microscopy

J. Y. Son; D. Y. Kim; H. Kim; W. J. Maeng; Y. S. Shin; Y. H. Shin

doi:10.1149/1.3574526

A HfO₂ thin film resistive switch based on conducting atomic force microscopy

J. Y. Son, D. Y. Kim, H. Kim, W. J. Maeng, Y. S. Shin, Y. H. Shin

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A HfO₂ thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO₂ channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO₂ RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

Original language	English
Pages (from-to)	H311-H313
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1149/1.3574526
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3574526

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AB - A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

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A HfO₂ thin film resistive switch based on conducting atomic force microscopy

Abstract

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