A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications

Hyoung Seok Oh, Taeksang Song, Sang Hyun Baek, Euisik Yoon, Choong Ki Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10dBm at 2.4GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not. only the output power stage, but the driver stage needs to be co-optimized for low power Operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18μm CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5dBm with a drain efficiency(DE) of 48.5% at IV supply voltage.

Original languageEnglish
Title of host publicationProceedings - 2006 IEEE Radio and Wireless Symposium
Pages235-238
Number of pages4
Publication statusPublished - 2006
Event2006 IEEE Radio and Wireless Symposium - San Diego, CA, United States
Duration: 2006 Jan 172006 Jan 19

Publication series

NameProceedings - 2006 IEEE Radio and Wireless Symposium
Volume2006

Conference

Conference2006 IEEE Radio and Wireless Symposium
Country/TerritoryUnited States
CitySan Diego, CA
Period06/1/1706/1/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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