A facile route to recover intrinsic graphene over large scale

Dong Wook Shin, Hyun Myoung Lee, Seong Man Yu, Kwang Soo Lim, Jae Hoon Jung, Min Kyu Kim, Sang Woo Kim, Jae Hee Han, Rodney S. Ruoff, Ji Beom Yoo

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)

Abstract

The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H 2O/O 2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H 2O/O 2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H 2O/O 2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

Original languageEnglish
Pages (from-to)7781-7788
Number of pages8
JournalACS Nano
Volume6
Issue number9
DOIs
Publication statusPublished - 2012 Sept 25

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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