A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

Beomjin Park, Jaesung Park, Jin Gyeong Son, Yong Jin Kim, Seong Uk Yu, Hyo Ju Park, Dong Hun Chae, Jinseok Byun, Gumhye Jeon, Sung Huh, Seoung Ki Lee, Artem Mishchenko, Seung Hyun, Tae Geol Lee, Sang Woo Han, Jong Hyun Ahn, Zonghoon Lee, Chanyong Hwang, Konstantin S. Novoselov, Kwang S. KimByung Hee Hong, Jin Kon Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures. (Graph Presented).

Original languageEnglish
Pages (from-to)8352-8360
Number of pages9
JournalACS Nano
Issue number8
Publication statusPublished - 2015 Aug 25

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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