A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

Hyun Kyu Ryu; Yil Wook Kim; Kangtaek Lee; Chee Burm Shin; Chang Koo Kim

doi:10.1016/j.mejo.2006.09.002

A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

Hyun Kyu Ryu, Yil Wook Kim, Kangtaek Lee, Chee Burm Shin, Chang Koo Kim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An etching of a SiO₂ contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C₄F₆/Ar/O₂/CH₂F₂ and c-C₄F₈/Ar/O₂/CH₂F₂ plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C₄F₆/Ar/O₂/CH₂F₂ plasma was shown to have 23% lower degree of bowing than that in the c-C₄F₈/Ar/O₂/CH₂F₂ plasma. The Kelvin and chain contact resistances of the contact holes etched in the C₄F₆/Ar/O₂/CH₂F₂ plasma were 10-12% higher than those in the c-C₄F₈/Ar/O₂/CH₂F₂ plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C₄F₆/Ar/O₂/CH₂F₂ and c-C₄F₈/Ar/O₂/CH₂F₂ plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C₄F₆/Ar/O₂/CH₂F₂ plasma were nearly identical to those in the c-C₄F₈/Ar/O₂/CH₂F₂ plasma, suggesting that the use of C₄F₆ gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.

Original language	English
Pages (from-to)	125-129
Number of pages	5
Journal	Microelectronics Journal
Volume	38
Issue number	1
DOIs	https://doi.org/10.1016/j.mejo.2006.09.002
Publication status	Published - 2007 Jan

Bibliographical note

Funding Information:
This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant nos. R01-2003-000-10103-0 and R01-2006-000-11264-0) and FOI Corporation.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2006.09.002

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@article{30c386b4b55740168eeea901611a401a,

title = "A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas",

abstract = "An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.",

author = "Ryu, {Hyun Kyu} and Kim, {Yil Wook} and Kangtaek Lee and Shin, {Chee Burm} and Kim, {Chang Koo}",

note = "Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant nos. R01-2003-000-10103-0 and R01-2006-000-11264-0) and FOI Corporation.",

year = "2007",

month = jan,

doi = "10.1016/j.mejo.2006.09.002",

language = "English",

volume = "38",

pages = "125--129",

journal = "Microelectronics Journal",

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AU - Ryu, Hyun Kyu

AU - Kim, Yil Wook

AU - Lee, Kangtaek

AU - Shin, Chee Burm

AU - Kim, Chang Koo

N1 - Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant nos. R01-2003-000-10103-0 and R01-2006-000-11264-0) and FOI Corporation.

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N2 - An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.

AB - An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.

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SN - 0026-2692

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SP - 125

EP - 129

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 1

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A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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