A compact resistor-based CMOS temperature sensor with an inaccuracy of 0.12 °c (3σ) and a Resolution FoM of 0.43 pJ·K2 in 65-nm CMOS

Woojun Choi; Yongtae Lee; Seonhong Kim; Sanghoon Lee; Jieun Jang; Junhyun Chun; Kofi A.A. Makinwa; Youngcheol Chae

doi:10.1109/JSSC.2018.2871622

A compact resistor-based CMOS temperature sensor with an inaccuracy of 0.12 °c (3σ) and a Resolution FoM of 0.43 pJ·K² in 65-nm CMOS

Woojun Choi, Yongtae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A.A. Makinwa, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm². It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K².

Original language	English
Article number	8485756
Pages (from-to)	3356-3367
Number of pages	12
Journal	IEEE Journal of Solid-State Circuits
Volume	53
Issue number	12
DOIs	https://doi.org/10.1109/JSSC.2018.2871622
Publication status	Published - 2018 Dec

Bibliographical note

Funding Information:
Manuscript received May 9, 2018; revised August 7, 2018 and September 12, 2018; accepted September 13, 2018. Date of publication October 8, 2018; date of current version December 21, 2018. This paper was approved by Guest Editor Yong-Ping Xu. This work was supported in part by SK Hynix and in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program). (Corresponding author: Youngcheol Chae.) W. Choi, Y. Lee, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonsei.ac.kr).

Publisher Copyright:
© 1966-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/JSSC.2018.2871622

Cite this

@article{341516731aee4270ad0adabd0027b139,

title = "A compact resistor-based CMOS temperature sensor with an inaccuracy of 0.12 °c (3σ) and a Resolution FoM of 0.43 pJ·K2 in 65-nm CMOS",

abstract = "This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm2. It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K2.",

author = "Woojun Choi and Yongtae Lee and Seonhong Kim and Sanghoon Lee and Jieun Jang and Junhyun Chun and Makinwa, {Kofi A.A.} and Youngcheol Chae",

note = "Funding Information: Manuscript received May 9, 2018; revised August 7, 2018 and September 12, 2018; accepted September 13, 2018. Date of publication October 8, 2018; date of current version December 21, 2018. This paper was approved by Guest Editor Yong-Ping Xu. This work was supported in part by SK Hynix and in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program). (Corresponding author: Youngcheol Chae.) W. Choi, Y. Lee, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonsei.ac.kr). Publisher Copyright: {\textcopyright} 1966-2012 IEEE.",

year = "2018",

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T1 - A compact resistor-based CMOS temperature sensor with an inaccuracy of 0.12 °c (3σ) and a Resolution FoM of 0.43 pJ·K2 in 65-nm CMOS

AU - Choi, Woojun

AU - Lee, Yongtae

AU - Kim, Seonhong

AU - Lee, Sanghoon

AU - Jang, Jieun

AU - Chun, Junhyun

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

N1 - Funding Information: Manuscript received May 9, 2018; revised August 7, 2018 and September 12, 2018; accepted September 13, 2018. Date of publication October 8, 2018; date of current version December 21, 2018. This paper was approved by Guest Editor Yong-Ping Xu. This work was supported in part by SK Hynix and in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program). (Corresponding author: Youngcheol Chae.) W. Choi, Y. Lee, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonsei.ac.kr). Publisher Copyright: © 1966-2012 IEEE.

PY - 2018/12

Y1 - 2018/12

N2 - This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm2. It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K2.

AB - This paper presents a compact resistor-based CMOS temperature sensor intended for dense thermal monitoring. It is based on an RC poly-phase filter (PPF), whose temperature-dependent phase shift is read out by a frequency-locked loop (FLL). The PPF's phase shift is determined by a zero-crossing (ZC) detector, allowing the rest of the FLL to be realized in an area-efficient manner. Implemented in a 65-nm CMOS technology, the sensor occupies only 7000 μm2. It can operate from supply voltages as low as 0.85 V and consumes 68 μW. A sensor based on a PPF made from silicided p-poly resistors and metal-insulator-metal (MIM) capacitors achieves an inaccuracy of ±0.12 °C (3σ) from -40 °Cto 85 °C and a resolution of 2.5 mK (rms) in a 1-ms conversion time. This corresponds to a resolution figure-of-merit (FoM) of 0.43 pJ·K2.

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