A compact DC-30 GHz 0.13-μm CMOS SP4T switch

Byung Wook Min; Gabriel M. Rebeiz

doi:10.1109/SMIC.2009.4770521

A compact DC-30 GHz 0.13-μm CMOS SP4T switch

Byung Wook Min, Gabriel M. Rebeiz

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

This paper presents a DC-30 GHz single-polefour-throw (SP4T) CMOS switch using 0.13 μm CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250 X 180 (μm²), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is > 25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input PIdB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.

Original language	English
Title of host publication	2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers
Pages	148-151
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2009.4770521
Publication status	Published - 2009
Event	2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - San Diego, CA, United States Duration: 2009 Jan 19 → 2009 Jan 21

Publication series

Name	2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers

Other

Other	2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09
Country/Territory	United States
City	San Diego, CA
Period	09/1/19 → 09/1/21

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SMIC.2009.4770521

Cite this

Min, B. W., & Rebeiz, G. M. (2009). A compact DC-30 GHz 0.13-μm CMOS SP4T switch. In 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers (pp. 148-151). [4770521] (2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers). https://doi.org/10.1109/SMIC.2009.4770521

@inproceedings{5736a6ed77d44eddb5ab4edcbe5a2c5a,

title = "A compact DC-30 GHz 0.13-μm CMOS SP4T switch",

abstract = "This paper presents a DC-30 GHz single-polefour-throw (SP4T) CMOS switch using 0.13 μm CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250 X 180 (μm2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is > 25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input PIdB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.",

author = "Min, {Byung Wook} and Rebeiz, {Gabriel M.}",

year = "2009",

doi = "10.1109/SMIC.2009.4770521",

language = "English",

isbn = "9781424428311",

series = "2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers",

pages = "148--151",

booktitle = "2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers",

note = "2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 ; Conference date: 19-01-2009 Through 21-01-2009",

}

Min, BW & Rebeiz, GM 2009, A compact DC-30 GHz 0.13-μm CMOS SP4T switch. in 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers., 4770521, 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers, pp. 148-151, 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09, San Diego, CA, United States, 09/1/19. https://doi.org/10.1109/SMIC.2009.4770521

A compact DC-30 GHz 0.13-μm CMOS SP4T switch. / Min, Byung Wook; Rebeiz, Gabriel M.
2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers. 2009. p. 148-151 4770521 (2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A compact DC-30 GHz 0.13-μm CMOS SP4T switch

AU - Min, Byung Wook

AU - Rebeiz, Gabriel M.

PY - 2009

Y1 - 2009

N2 - This paper presents a DC-30 GHz single-polefour-throw (SP4T) CMOS switch using 0.13 μm CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250 X 180 (μm2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is > 25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input PIdB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.

AB - This paper presents a DC-30 GHz single-polefour-throw (SP4T) CMOS switch using 0.13 μm CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250 X 180 (μm2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is > 25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input PIdB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.

UR - http://www.scopus.com/inward/record.url?scp=65949084253&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65949084253&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2009.4770521

DO - 10.1109/SMIC.2009.4770521

M3 - Conference contribution

AN - SCOPUS:65949084253

SN - 9781424428311

T3 - 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers

SP - 148

EP - 151

BT - 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers

T2 - 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09

Y2 - 19 January 2009 through 21 January 2009

ER -

A compact DC-30 GHz 0.13-μm CMOS SP4T switch

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this