Abstract
A bandwidth adjustable integrated optical receiver having an on-chip silicon avalanche photodetector is realized with standard 0.25-μm silicon-germanium bipolar complementary metal-oxide-semiconductor technology for optical interconnect applications. With the controllable capacitive degeneration technique, the optical receiver bandwidth can be adjusted for the best bit error rate performance.
Original language | English |
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Pages (from-to) | 404-409 |
Number of pages | 6 |
Journal | ieice electronics express |
Volume | 8 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 Apr 10 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering