A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control

Tae Hwan Jin; Tae Wook Kim

doi:10.1109/LMWC.2011.2167503

A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control

Tae Hwan Jin, Tae Wook Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

This letter presents a g_m″-cancellation range extension method with bulk-bias control that was applied to a Multiple Gated Transistors (MGTR) technique, which is a linearity enhancement technique for RF amplifiers. Instead of adjusting the gate-biasing voltage of the auxiliary transistor (AT) (V_shift) in conventional g_m″-cancellation, we propose to use the bulk-biasing voltage, V_BS, which allows for range extension of the g_m″-cancellation of AT. The proposed technique does not require any other additional biasing circuits and has the benefit of consuming less power. The proposed low noise amplifier (LNA) is implemented in 0.18 μm 1-poly-6-metal CMOS technology. Our results show that the LNA achieves a noise figure of 1.76 dB, a +12.45 dBm input third order intercept point (IIP3), and a 15 dB power gain at 0.9 GHz, with the core LNA consuming 4.5 mA from a 1.5 V power supply.

Original language	English
Article number	6034540
Pages (from-to)	616-618
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	21
Issue number	11
DOIs	https://doi.org/10.1109/LMWC.2011.2167503
Publication status	Published - 2011 Nov

Bibliographical note

Funding Information:
Manuscript received May 24, 2011; revised August 16, 2011; accepted August 20, 2011. Date of publication October 06, 2011; date of current version November 09, 2011. This work was supported by the Basic Science Research program through the NRF of Korea funded by the MEST ( 2011-0003356) and by IDEC.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2011.2167503

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abstract = "This letter presents a gm″-cancellation range extension method with bulk-bias control that was applied to a Multiple Gated Transistors (MGTR) technique, which is a linearity enhancement technique for RF amplifiers. Instead of adjusting the gate-biasing voltage of the auxiliary transistor (AT) (Vshift) in conventional gm″-cancellation, we propose to use the bulk-biasing voltage, VBS, which allows for range extension of the gm″-cancellation of AT. The proposed technique does not require any other additional biasing circuits and has the benefit of consuming less power. The proposed low noise amplifier (LNA) is implemented in 0.18 μm 1-poly-6-metal CMOS technology. Our results show that the LNA achieves a noise figure of 1.76 dB, a +12.45 dBm input third order intercept point (IIP3), and a 15 dB power gain at 0.9 GHz, with the core LNA consuming 4.5 mA from a 1.5 V power supply.",

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A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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