Abstract
This paper presents a time-of-flight (ToF) image sensor for outdoor applications. The sensor employs a gain-modulated avalanche photodiode (APD) that achieves high modulation frequency. The suppression capability of background light is greatly improved up to 200klx by using a combination of in pixel auto-zeroing and chopping. A64 × 64 APD-based ToF sensor is fabricated in a0.11 μ m CMOS. It achieves depth ranges from 0.5 to 2 m with 25MHz modulation and from 2 to 20 m with 1.56MHz modulation. For both ranges, it achieves a non-linearity below 0.8% and a precision below 3.4% at a 3D frame rate of 96fps.
Original language | English |
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Title of host publication | 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | C256-C257 |
ISBN (Electronic) | 9784863487185 |
DOIs | |
Publication status | Published - 2019 Jun |
Event | 33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan Duration: 2019 Jun 9 → 2019 Jun 14 |
Publication series
Name | IEEE Symposium on VLSI Circuits, Digest of Technical Papers |
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Volume | 2019-June |
Conference
Conference | 33rd Symposium on VLSI Circuits, VLSI Circuits 2019 |
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Country/Territory | Japan |
City | Kyoto |
Period | 19/6/9 → 19/6/14 |
Bibliographical note
Publisher Copyright:© 2019 JSAP.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering