A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Injun Park; Woojin Jo; Chanmin Park; Byungchoul Park; Jimin Cheon; Youngcheol Chae

doi:10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Injun Park, Woojin Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.

Original language	English
Title of host publication	2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	C214-C215
ISBN (Electronic)	9784863487185
DOIs	https://doi.org/10.23919/VLSIC.2019.8778169
Publication status	Published - 2019 Jun
Event	33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan Duration: 2019 Jun 9 → 2019 Jun 14

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2019-June

Conference

Conference	33rd Symposium on VLSI Circuits, VLSI Circuits 2019
Country/Territory	Japan
City	Kyoto
Period	19/6/9 → 19/6/14

Bibliographical note

Publisher Copyright:
© 2019 JSAP.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.23919/VLSIC.2019.8778169

Cite this

Park, I., Jo, W., Park, C., Park, B., Cheon, J., & Chae, Y. (2019). A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. In 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers (pp. C214-C215). Article 8778169 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIC.2019.8778169

@inproceedings{b3826b71bca9487baedcd4d85ee9618e,

title = "A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition",

abstract = "This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.",

author = "Injun Park and Woojin Jo and Chanmin Park and Byungchoul Park and Jimin Cheon and Youngcheol Chae",

note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 33rd Symposium on VLSI Circuits, VLSI Circuits 2019 ; Conference date: 09-06-2019 Through 14-06-2019",

year = "2019",

month = jun,

doi = "10.23919/VLSIC.2019.8778169",

language = "English",

series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "C214--C215",

booktitle = "2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers",

address = "United States",

}

Park, I, Jo, W, Park, C, Park, B, Cheon, J & Chae, Y 2019, A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. in 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers., 8778169, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. C214-C215, 33rd Symposium on VLSI Circuits, VLSI Circuits 2019, Kyoto, Japan, 19/6/9. https://doi.org/10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. / Park, Injun; Jo, Woojin; Park, Chanmin et al.
2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. C214-C215 8778169 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

AU - Park, Injun

AU - Jo, Woojin

AU - Park, Chanmin

AU - Park, Byungchoul

AU - Cheon, Jimin

AU - Chae, Youngcheol

PY - 2019/6

Y1 - 2019/6

N2 - This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.

AB - This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.

UR - http://www.scopus.com/inward/record.url?scp=85073905557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073905557&partnerID=8YFLogxK

U2 - 10.23919/VLSIC.2019.8778169

DO - 10.23919/VLSIC.2019.8778169

M3 - Conference contribution

AN - SCOPUS:85073905557

T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

SP - C214-C215

BT - 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 33rd Symposium on VLSI Circuits, VLSI Circuits 2019

Y2 - 9 June 2019 through 14 June 2019

ER -

Park I, Jo W, Park C, Park B, Cheon J, Chae Y. A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. In 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. p. C214-C215. 8778169. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). doi: 10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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