TY - JOUR
T1 - A 64 × 64 SPAD-Based Indirect Time-of-Flight Image Sensor with 2-Tap Analog Pulse Counters
AU - Park, Byungchoul
AU - Park, Injun
AU - Park, Chanmin
AU - Choi, Woojun
AU - Na, Yoondeok
AU - Lee, Myung Jae
AU - Chae, Youngcheol
N1 - Publisher Copyright:
© 1966-2012 IEEE.
PY - 2021/10
Y1 - 2021/10
N2 - This article presents a 64 × 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay of which is measured by compact analog time-gated pulse counters and then read out by column-parallel single-slope (SS) analog-to-digital converters (ADCs). We present two prototypes of iToF sensors that exploit one- or two-tap counters in the pixel. Compared to the one-tap sensor, the two-tap sensor achieves an improved fill factor of 26.3% with a pixel pitch of 32 μm. This improvement is realized by using a retrograde deep n-well as guard-ring structure and two analog counters whose layout has been optimized. By utilizing two different demodulation frequencies of 1.56 and 50 MHz, the two-tap sensor achieves a large depth range of 50 m with a relative depth uncertainty of 0.22% and a high 3-D frame rate of 65 frames/s. When using an optical bandpass filter and multi-frame accumulation, the sensor shows a tolerance of 120-klx sunlight. Compared with the previous iToF benchmarks, the proposed SPAD-based iToF sensor demonstrates the largest depth range without compromising the relative depth uncertainty.
AB - This article presents a 64 × 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay of which is measured by compact analog time-gated pulse counters and then read out by column-parallel single-slope (SS) analog-to-digital converters (ADCs). We present two prototypes of iToF sensors that exploit one- or two-tap counters in the pixel. Compared to the one-tap sensor, the two-tap sensor achieves an improved fill factor of 26.3% with a pixel pitch of 32 μm. This improvement is realized by using a retrograde deep n-well as guard-ring structure and two analog counters whose layout has been optimized. By utilizing two different demodulation frequencies of 1.56 and 50 MHz, the two-tap sensor achieves a large depth range of 50 m with a relative depth uncertainty of 0.22% and a high 3-D frame rate of 65 frames/s. When using an optical bandpass filter and multi-frame accumulation, the sensor shows a tolerance of 120-klx sunlight. Compared with the previous iToF benchmarks, the proposed SPAD-based iToF sensor demonstrates the largest depth range without compromising the relative depth uncertainty.
KW - 3-D imaging
KW - CMOS time-of-flight (ToF) sensor
KW - SPAD-based iToF sensor
KW - analog counter
KW - global shutter
KW - indirect ToF (iToF) sensor
KW - single-photon avalanche diode (SPAD)
KW - time-gated pulse counter
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U2 - 10.1109/JSSC.2021.3094524
DO - 10.1109/JSSC.2021.3094524
M3 - Article
AN - SCOPUS:85110913165
SN - 0018-9200
VL - 56
SP - 2956
EP - 2967
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 10
ER -