A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS

Woorham Bae; Haram Ju; Kwanseo Park; Deog Kyoon Jeong

doi:10.1109/ASSCC.2016.7844180

A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS

Woorham Bae, Haram Ju, Kwanseo Park, Deog Kyoon Jeong

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A voltage-mode (VM) transmitter which offers a wide operation range of 6-to-32 Gb/s, controllable pre-emphasis equalization and output voltage swing without altering output impedance, and a power supply scalability is presented. A quarter-rate clocking architecture is employed in order to maximize the scalability and energy efficiency across the various operating conditions. A P-over-N VM driver is used for CMOS compatibility and wide voltage-swing range required for various I/O standards. Two supply regulators calibrate the output impedance of the VM driver across the wide swing and pre-emphasis range. A single phase-locked loop is used to provide a wide frequency range. The prototype chip is fabricated in 65-nm CMOS technology and occupies active area of 0.48×0.36 mm². The proposed transmitter achieves 250-to-600-mV single-ended swing and exhibits the energy efficiency of 2.10-to-2.93 pJ/bit across the data rate of 6-to-32 Gb/s.

Original language	English
Title of host publication	2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-244
Number of pages	4
ISBN (Electronic)	9781509037001
DOIs	https://doi.org/10.1109/ASSCC.2016.7844180
Publication status	Published - 2017 Feb 6
Event	12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Toyama, Japan Duration: 2016 Nov 7 → 2016 Nov 9

Publication series

Name	2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings

Other

Other	12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016
Country/Territory	Japan
City	Toyama
Period	16/11/7 → 16/11/9

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Hardware and Architecture

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ASSCC.2016.7844180

Cite this

Bae, W., Ju, H., Park, K., & Jeong, D. K. (2017). A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS. In 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings (pp. 241-244). Article 7844180 (2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2016.7844180

Bae, Woorham ; Ju, Haram ; Park, Kwanseo et al. / A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS. 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 241-244 (2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings).

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title = "A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS",

abstract = "A voltage-mode (VM) transmitter which offers a wide operation range of 6-to-32 Gb/s, controllable pre-emphasis equalization and output voltage swing without altering output impedance, and a power supply scalability is presented. A quarter-rate clocking architecture is employed in order to maximize the scalability and energy efficiency across the various operating conditions. A P-over-N VM driver is used for CMOS compatibility and wide voltage-swing range required for various I/O standards. Two supply regulators calibrate the output impedance of the VM driver across the wide swing and pre-emphasis range. A single phase-locked loop is used to provide a wide frequency range. The prototype chip is fabricated in 65-nm CMOS technology and occupies active area of 0.48×0.36 mm2. The proposed transmitter achieves 250-to-600-mV single-ended swing and exhibits the energy efficiency of 2.10-to-2.93 pJ/bit across the data rate of 6-to-32 Gb/s.",

author = "Woorham Bae and Haram Ju and Kwanseo Park and Jeong, {Deog Kyoon}",

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Bae, W, Ju, H, Park, K & Jeong, DK 2017, A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS. in 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings., 7844180, 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 241-244, 12th IEEE Asian Solid-State Circuits Conference, A-SSCC 2016, Toyama, Japan, 16/11/7. https://doi.org/10.1109/ASSCC.2016.7844180

A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS. / Bae, Woorham; Ju, Haram; Park, Kwanseo et al.
2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 241-244 7844180 (2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - A voltage-mode (VM) transmitter which offers a wide operation range of 6-to-32 Gb/s, controllable pre-emphasis equalization and output voltage swing without altering output impedance, and a power supply scalability is presented. A quarter-rate clocking architecture is employed in order to maximize the scalability and energy efficiency across the various operating conditions. A P-over-N VM driver is used for CMOS compatibility and wide voltage-swing range required for various I/O standards. Two supply regulators calibrate the output impedance of the VM driver across the wide swing and pre-emphasis range. A single phase-locked loop is used to provide a wide frequency range. The prototype chip is fabricated in 65-nm CMOS technology and occupies active area of 0.48×0.36 mm2. The proposed transmitter achieves 250-to-600-mV single-ended swing and exhibits the energy efficiency of 2.10-to-2.93 pJ/bit across the data rate of 6-to-32 Gb/s.

AB - A voltage-mode (VM) transmitter which offers a wide operation range of 6-to-32 Gb/s, controllable pre-emphasis equalization and output voltage swing without altering output impedance, and a power supply scalability is presented. A quarter-rate clocking architecture is employed in order to maximize the scalability and energy efficiency across the various operating conditions. A P-over-N VM driver is used for CMOS compatibility and wide voltage-swing range required for various I/O standards. Two supply regulators calibrate the output impedance of the VM driver across the wide swing and pre-emphasis range. A single phase-locked loop is used to provide a wide frequency range. The prototype chip is fabricated in 65-nm CMOS technology and occupies active area of 0.48×0.36 mm2. The proposed transmitter achieves 250-to-600-mV single-ended swing and exhibits the energy efficiency of 2.10-to-2.93 pJ/bit across the data rate of 6-to-32 Gb/s.

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M3 - Conference contribution

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BT - 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings

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ER -

Bae W, Ju H, Park K, Jeong DK. A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS. In 2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 241-244. 7844180. (2016 IEEE Asian Solid-State Circuits Conference, A-SSCC 2016 - Proceedings). doi: 10.1109/ASSCC.2016.7844180

A 6-to-32 Gb/s voltage-mode transmitter with scalable supply, voltage swing, and pre-emphasis in 65-nm CMOS

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

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