A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

Yongtae Lee; Woojun Choi; Taewoong Kim; Seungwoo Song; Kofi A.A. Makinwa; Youngcheol Chae

doi:10.1109/LSSC.2019.2937441

A 5800-μ m₂Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

Yongtae Lee, Woojun Choi, Taewoong Kim, Seungwoo Song, Kofi A.A. Makinwa, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

Original language	English
Article number	8877960
Pages (from-to)	67-70
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	2
Issue number	9
DOIs	https://doi.org/10.1109/LSSC.2019.2937441
Publication status	Published - 2019 Sept

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/LSSC.2019.2937441

Cite this

@article{ac5023429ece44298aaf91fb2b070f4e,

title = "A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS",

abstract = "This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.",

author = "Yongtae Lee and Woojun Choi and Taewoong Kim and Seungwoo Song and Makinwa, {Kofi A.A.} and Youngcheol Chae",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2019",

month = sep,

doi = "10.1109/LSSC.2019.2937441",

language = "English",

volume = "2",

pages = "67--70",

journal = "IEEE Solid-State Circuits Letters",

issn = "2573-9603",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

AU - Lee, Yongtae

AU - Choi, Woojun

AU - Kim, Taewoong

AU - Song, Seungwoo

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

PY - 2019/9

Y1 - 2019/9

N2 - This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

AB - This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

UR - http://www.scopus.com/inward/record.url?scp=85091322867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85091322867&partnerID=8YFLogxK

U2 - 10.1109/LSSC.2019.2937441

DO - 10.1109/LSSC.2019.2937441

M3 - Article

AN - SCOPUS:85091322867

SN - 2573-9603

VL - 2

SP - 67

EP - 70

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

IS - 9

M1 - 8877960

ER -